Reliability Investigation of 0.18-μm SOI MOS Transistors at High Temperatures
- Autores: Benediktov A.1, Ignatov P.1, Mikhailov A.1, Potupchik A.1
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Afiliações:
- Molecular Electronics Research Institute (MERI)
- Edição: Volume 47, Nº 5 (2018)
- Páginas: 317-322
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186885
- DOI: https://doi.org/10.1134/S1063739718050037
- ID: 186885
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Resumo
In this paper, we estimate the basic parameters of 0.18-μm SOI MOS transistors in the temperature range from –60 to 300°С and investigate their reliability at high temperatures. The specific characteristics of SOI MOS transistors that manifest themselves at high temperatures should be taken into account when designing high-temperature integrated circuits in order to avoid their premature failures and improve the reliability of electronic devices.
Sobre autores
A. Benediktov
Molecular Electronics Research Institute (MERI)
Autor responsável pela correspondência
Email: asb_sm@mail.ru
Rússia, Zelenograd, Moscow, 124460
P. Ignatov
Molecular Electronics Research Institute (MERI)
Email: asb_sm@mail.ru
Rússia, Zelenograd, Moscow, 124460
A. Mikhailov
Molecular Electronics Research Institute (MERI)
Email: asb_sm@mail.ru
Rússia, Zelenograd, Moscow, 124460
A. Potupchik
Molecular Electronics Research Institute (MERI)
Email: asb_sm@mail.ru
Rússia, Zelenograd, Moscow, 124460