Features of the Current Flow in Injection Structures Based on PbSnTe:In Films
- 作者: Ishchenko D.1, Neizvestnyi I.1, Pashchin N.1, Sherstyakova V.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- 期: 卷 47, 编号 4 (2018)
- 页面: 221-225
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186846
- DOI: https://doi.org/10.1134/S1063739718040042
- ID: 186846
如何引用文章
详细
This paper reports a study of the current–voltage (I–V) features of the p-i-p structures based on Pb1–xSnxTe:In films with the tin content х ≈ 0.31 in which the metal–insulator transition occurs. It is shown that the photocurrent is the hole current under light interband excitation, and electron trapping is dominant. The experimental and theoretical data are compared.
作者简介
D. Ishchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: ischenkod@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
I. Neizvestnyi
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ischenkod@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
N. Pashchin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ischenkod@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Sherstyakova
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ischenkod@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090