Features of the Current Flow in Injection Structures Based on PbSnTe:In Films

D. V. Ishchenko; I. G. Neizvestnyi; N. S. Pashchin; V. N. Sherstyakova

doi:10.1134/S1063739718040042

Features of the Current Flow in Injection Structures Based on PbSnTe:In Films

Авторы: Ishchenko D.¹, Neizvestnyi I.¹, Pashchin N.¹, Sherstyakova V.¹
Учреждения:
1. Rzhanov Institute of Semiconductor Physics, Siberian Branch
Выпуск: Том 47, № 4 (2018)
Страницы: 221-225
Раздел: Article
URL: https://journals.rcsi.science/1063-7397/article/view/186846
DOI: https://doi.org/10.1134/S1063739718040042
ID: 186846

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Аннотация

This paper reports a study of the current–voltage (I–V) features of the p-i-p structures based on Pb_1–xSn_xTe:In films with the tin content х ≈ 0.31 in which the metal–insulator transition occurs. It is shown that the photocurrent is the hole current under light interband excitation, and electron trapping is dominant. The experimental and theoretical data are compared.