Features of the Current Flow in Injection Structures Based on PbSnTe:In Films
- Autores: Ishchenko D.1, Neizvestnyi I.1, Pashchin N.1, Sherstyakova V.1
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Edição: Volume 47, Nº 4 (2018)
- Páginas: 221-225
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186846
- DOI: https://doi.org/10.1134/S1063739718040042
- ID: 186846
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Resumo
This paper reports a study of the current–voltage (I–V) features of the p-i-p structures based on Pb1–xSnxTe:In films with the tin content х ≈ 0.31 in which the metal–insulator transition occurs. It is shown that the photocurrent is the hole current under light interband excitation, and electron trapping is dominant. The experimental and theoretical data are compared.
Sobre autores
D. Ishchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Autor responsável pela correspondência
Email: ischenkod@isp.nsc.ru
Rússia, Novosibirsk, 630090
I. Neizvestnyi
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ischenkod@isp.nsc.ru
Rússia, Novosibirsk, 630090
N. Pashchin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ischenkod@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Sherstyakova
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ischenkod@isp.nsc.ru
Rússia, Novosibirsk, 630090