Experimental Evaluation of Reliability of Deep Submicron SOI MOS Transistors at High Temperatures
- 作者: Benediktov A.1, Shelepin N.1, Ignatov P.1
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隶属关系:
- Molecular Electronics Research Institute (MERI)
- 期: 卷 47, 编号 3 (2018)
- 页面: 217-220
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186843
- DOI: https://doi.org/10.1134/S1063739718030034
- ID: 186843
如何引用文章
详细
In this paper, 0.18–0.5 μm SOI MOS transistors are tested for compliance with the reliability criteria applied to high-temperature electronics and their components. The main parameters of SOI MOS transistors are measured in the temperature range from −60 to +300°С. The specific behavior exhibited by SOI MOS transistors at high temperatures should be taken into account when designing high-temperature integrated circuits so as to avoid premature failures and increase the reliability of devices.
作者简介
A. Benediktov
Molecular Electronics Research Institute (MERI)
编辑信件的主要联系方式.
Email: asb_sm@mail.ru
俄罗斯联邦, Zelenograd, Moscow, 124460
N. Shelepin
Molecular Electronics Research Institute (MERI)
Email: asb_sm@mail.ru
俄罗斯联邦, Zelenograd, Moscow, 124460
P. Ignatov
Molecular Electronics Research Institute (MERI)
Email: asb_sm@mail.ru
俄罗斯联邦, Zelenograd, Moscow, 124460