Мақаланы E-mail арқылы жіберу Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology
- Авторлар: Orlov O.M.1,2, Voronov D.D.3,2, Izmailov R.A.3,2, Krasnikov G.Y.1,2
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Мекемелер:
- OAO Mikron
- AO Research Institute of Molecular Electronics
- Moscow Physical-Technical Institute (Technical University)
- Шығарылым: Том 46, № 5 (2017)
- Беттер: 353-358
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186528
- DOI: https://doi.org/10.1134/S1063739717050067
- ID: 186528
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Аннотация
The results of the studies of the features of integrating the elements of nonvolatile ferroelectric random access memory (FRAM) with CMOS technology are presented. The possibility and prospects of using their nanosized layers in the elements of nonvolatile FRAM are demonstrated.
Авторлар туралы
O. Orlov
OAO Mikron; AO Research Institute of Molecular Electronics
Хат алмасуға жауапты Автор.
Email: oorlov@mikron.ru
Ресей, Zelenograd, Moscow, 124460; Zelenograd, Moscow, 124460
D. Voronov
Moscow Physical-Technical Institute (Technical University); AO Research Institute of Molecular Electronics
Email: oorlov@mikron.ru
Ресей, Dolgoprudnyi, Moscow, 141700; Zelenograd, Moscow, 124460
R. Izmailov
Moscow Physical-Technical Institute (Technical University); AO Research Institute of Molecular Electronics
Email: oorlov@mikron.ru
Ресей, Dolgoprudnyi, Moscow, 141700; Zelenograd, Moscow, 124460
G. Krasnikov
OAO Mikron; AO Research Institute of Molecular Electronics
Email: oorlov@mikron.ru
Ресей, Zelenograd, Moscow, 124460; Zelenograd, Moscow, 124460
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