Enviar artigo por via de e-mail Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology
- Autores: Orlov O.M.1,2, Voronov D.D.3,2, Izmailov R.A.3,2, Krasnikov G.Y.1,2
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Afiliações:
- OAO Mikron
- AO Research Institute of Molecular Electronics
- Moscow Physical-Technical Institute (Technical University)
- Edição: Volume 46, Nº 5 (2017)
- Páginas: 353-358
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186528
- DOI: https://doi.org/10.1134/S1063739717050067
- ID: 186528
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Resumo
The results of the studies of the features of integrating the elements of nonvolatile ferroelectric random access memory (FRAM) with CMOS technology are presented. The possibility and prospects of using their nanosized layers in the elements of nonvolatile FRAM are demonstrated.
Sobre autores
O. Orlov
OAO Mikron; AO Research Institute of Molecular Electronics
Autor responsável pela correspondência
Email: oorlov@mikron.ru
Rússia, Zelenograd, Moscow, 124460; Zelenograd, Moscow, 124460
D. Voronov
Moscow Physical-Technical Institute (Technical University); AO Research Institute of Molecular Electronics
Email: oorlov@mikron.ru
Rússia, Dolgoprudnyi, Moscow, 141700; Zelenograd, Moscow, 124460
R. Izmailov
Moscow Physical-Technical Institute (Technical University); AO Research Institute of Molecular Electronics
Email: oorlov@mikron.ru
Rússia, Dolgoprudnyi, Moscow, 141700; Zelenograd, Moscow, 124460
G. Krasnikov
OAO Mikron; AO Research Institute of Molecular Electronics
Email: oorlov@mikron.ru
Rússia, Zelenograd, Moscow, 124460; Zelenograd, Moscow, 124460
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