电邮这篇文章 Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology
- 作者: Orlov O.M.1,2, Voronov D.D.3,2, Izmailov R.A.3,2, Krasnikov G.Y.1,2
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隶属关系:
- OAO Mikron
- AO Research Institute of Molecular Electronics
- Moscow Physical-Technical Institute (Technical University)
- 期: 卷 46, 编号 5 (2017)
- 页面: 353-358
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186528
- DOI: https://doi.org/10.1134/S1063739717050067
- ID: 186528
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详细
The results of the studies of the features of integrating the elements of nonvolatile ferroelectric random access memory (FRAM) with CMOS technology are presented. The possibility and prospects of using their nanosized layers in the elements of nonvolatile FRAM are demonstrated.
作者简介
O. Orlov
OAO Mikron; AO Research Institute of Molecular Electronics
编辑信件的主要联系方式.
Email: oorlov@mikron.ru
俄罗斯联邦, Zelenograd, Moscow, 124460; Zelenograd, Moscow, 124460
D. Voronov
Moscow Physical-Technical Institute (Technical University); AO Research Institute of Molecular Electronics
Email: oorlov@mikron.ru
俄罗斯联邦, Dolgoprudnyi, Moscow, 141700; Zelenograd, Moscow, 124460
R. Izmailov
Moscow Physical-Technical Institute (Technical University); AO Research Institute of Molecular Electronics
Email: oorlov@mikron.ru
俄罗斯联邦, Dolgoprudnyi, Moscow, 141700; Zelenograd, Moscow, 124460
G. Krasnikov
OAO Mikron; AO Research Institute of Molecular Electronics
Email: oorlov@mikron.ru
俄罗斯联邦, Zelenograd, Moscow, 124460; Zelenograd, Moscow, 124460
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