电邮这篇文章 Resistive switching in mesoscopic heterostructures based on Nd2–xCexCuO4–y epitaxial films
- 作者: Tulina N.1, Ivanov A.2, Rossolenko A.1, Shmytko I.1, Ionov A.1, Mozhchil’ R.1,2, Borisenko I.3
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隶属关系:
- Institute of Solid State Physics
- National Research Nuclear University (MEPhI)
- Institute of Microelectronics Technology and High-Purity Materials
- 期: 卷 46, 编号 3 (2017)
- 页面: 180-185
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186338
- DOI: https://doi.org/10.1134/S1063739717030106
- ID: 186338
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详细
Reversible and stable bistable resistive switching were observed in planar-type junctions Nd2–xCexCuO4–y/Nd2–xCexO1.75/Ag. It was shown that current transport in such junctions has a diode character with Schottky-like barriers in highly doped semiconductors. It was revealed that the key factor for switching is the presence of the second phase Nd2–xCexO1.75, deficient in oxygen, epitaxially germinated at the Nd2–xCexCuO4–y surface.
作者简介
N. Tulina
Institute of Solid State Physics
编辑信件的主要联系方式.
Email: tulina@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
A. Ivanov
National Research Nuclear University (MEPhI)
Email: tulina@issp.ac.ru
俄罗斯联邦, Moscow, 119991
A. Rossolenko
Institute of Solid State Physics
Email: tulina@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
I. Shmytko
Institute of Solid State Physics
Email: tulina@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
A. Ionov
Institute of Solid State Physics
Email: tulina@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
R. Mozhchil’
Institute of Solid State Physics; National Research Nuclear University (MEPhI)
Email: tulina@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432; Moscow, 119991
I. Borisenko
Institute of Microelectronics Technology and High-Purity Materials
Email: tulina@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
