Мақаланы E-mail арқылы жіберу Resistive switching in mesoscopic heterostructures based on Nd2–xCexCuO4–y epitaxial films
- Авторлар: Tulina N.1, Ivanov A.2, Rossolenko A.1, Shmytko I.1, Ionov A.1, Mozhchil’ R.1,2, Borisenko I.3
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Мекемелер:
- Institute of Solid State Physics
- National Research Nuclear University (MEPhI)
- Institute of Microelectronics Technology and High-Purity Materials
- Шығарылым: Том 46, № 3 (2017)
- Беттер: 180-185
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186338
- DOI: https://doi.org/10.1134/S1063739717030106
- ID: 186338
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
Reversible and stable bistable resistive switching were observed in planar-type junctions Nd2–xCexCuO4–y/Nd2–xCexO1.75/Ag. It was shown that current transport in such junctions has a diode character with Schottky-like barriers in highly doped semiconductors. It was revealed that the key factor for switching is the presence of the second phase Nd2–xCexO1.75, deficient in oxygen, epitaxially germinated at the Nd2–xCexCuO4–y surface.
Авторлар туралы
N. Tulina
Institute of Solid State Physics
Хат алмасуға жауапты Автор.
Email: tulina@issp.ac.ru
Ресей, Chernogolovka, Moscow oblast, 142432
A. Ivanov
National Research Nuclear University (MEPhI)
Email: tulina@issp.ac.ru
Ресей, Moscow, 119991
A. Rossolenko
Institute of Solid State Physics
Email: tulina@issp.ac.ru
Ресей, Chernogolovka, Moscow oblast, 142432
I. Shmytko
Institute of Solid State Physics
Email: tulina@issp.ac.ru
Ресей, Chernogolovka, Moscow oblast, 142432
A. Ionov
Institute of Solid State Physics
Email: tulina@issp.ac.ru
Ресей, Chernogolovka, Moscow oblast, 142432
R. Mozhchil’
Institute of Solid State Physics; National Research Nuclear University (MEPhI)
Email: tulina@issp.ac.ru
Ресей, Chernogolovka, Moscow oblast, 142432; Moscow, 119991
I. Borisenko
Institute of Microelectronics Technology and High-Purity Materials
Email: tulina@issp.ac.ru
Ресей, Chernogolovka, Moscow oblast, 142432
