Отправить статью по E-mail Resistive switching in mesoscopic heterostructures based on Nd2–xCexCuO4–y epitaxial films
- Авторы: Tulina N.1, Ivanov A.2, Rossolenko A.1, Shmytko I.1, Ionov A.1, Mozhchil’ R.1,2, Borisenko I.3
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Учреждения:
- Institute of Solid State Physics
- National Research Nuclear University (MEPhI)
- Institute of Microelectronics Technology and High-Purity Materials
- Выпуск: Том 46, № 3 (2017)
- Страницы: 180-185
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186338
- DOI: https://doi.org/10.1134/S1063739717030106
- ID: 186338
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Аннотация
Reversible and stable bistable resistive switching were observed in planar-type junctions Nd2–xCexCuO4–y/Nd2–xCexO1.75/Ag. It was shown that current transport in such junctions has a diode character with Schottky-like barriers in highly doped semiconductors. It was revealed that the key factor for switching is the presence of the second phase Nd2–xCexO1.75, deficient in oxygen, epitaxially germinated at the Nd2–xCexCuO4–y surface.
Об авторах
N. Tulina
Institute of Solid State Physics
Автор, ответственный за переписку.
Email: tulina@issp.ac.ru
Россия, Chernogolovka, Moscow oblast, 142432
A. Ivanov
National Research Nuclear University (MEPhI)
Email: tulina@issp.ac.ru
Россия, Moscow, 119991
A. Rossolenko
Institute of Solid State Physics
Email: tulina@issp.ac.ru
Россия, Chernogolovka, Moscow oblast, 142432
I. Shmytko
Institute of Solid State Physics
Email: tulina@issp.ac.ru
Россия, Chernogolovka, Moscow oblast, 142432
A. Ionov
Institute of Solid State Physics
Email: tulina@issp.ac.ru
Россия, Chernogolovka, Moscow oblast, 142432
R. Mozhchil’
Institute of Solid State Physics; National Research Nuclear University (MEPhI)
Email: tulina@issp.ac.ru
Россия, Chernogolovka, Moscow oblast, 142432; Moscow, 119991
I. Borisenko
Institute of Microelectronics Technology and High-Purity Materials
Email: tulina@issp.ac.ru
Россия, Chernogolovka, Moscow oblast, 142432
