Investigation of textured aluminum nitride films prepared by chemical vapor deposition
- Авторлар: Red’kin A.N.1, Ryzhova M.V.1, Yakimov E.E.1, Roshchupkin D.V.1
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Мекемелер:
- Institute of Microelectronics Technology and High-Purity Materials
- Шығарылым: Том 46, № 1 (2017)
- Беттер: 26-29
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186204
- DOI: https://doi.org/10.1134/S1063739717010085
- ID: 186204
Дәйексөз келтіру
Аннотация
Textured polycrystalline aluminum nitride films are grown on a silica substrate by chemical vapor deposition using metallic aluminum and ammonium chloride as the initial reagents. The good texture and crystal quality of the prepared films are confirmed by raster electron microscopy, Raman spectroscopy, and X-ray diffraction.
Авторлар туралы
A. Red’kin
Institute of Microelectronics Technology and High-Purity Materials
Хат алмасуға жауапты Автор.
Email: arcadii@iptm.ru
Ресей, Chernogolovka, Moscow region, 142432
M. Ryzhova
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
Ресей, Chernogolovka, Moscow region, 142432
E. Yakimov
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
Ресей, Chernogolovka, Moscow region, 142432
D. Roshchupkin
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
Ресей, Chernogolovka, Moscow region, 142432
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