Investigation of textured aluminum nitride films prepared by chemical vapor deposition


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Textured polycrystalline aluminum nitride films are grown on a silica substrate by chemical vapor deposition using metallic aluminum and ammonium chloride as the initial reagents. The good texture and crystal quality of the prepared films are confirmed by raster electron microscopy, Raman spectroscopy, and X-ray diffraction.

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A. Red’kin

Institute of Microelectronics Technology and High-Purity Materials

编辑信件的主要联系方式.
Email: arcadii@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432

M. Ryzhova

Institute of Microelectronics Technology and High-Purity Materials

Email: arcadii@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432

E. Yakimov

Institute of Microelectronics Technology and High-Purity Materials

Email: arcadii@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432

D. Roshchupkin

Institute of Microelectronics Technology and High-Purity Materials

Email: arcadii@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432

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