Investigation of textured aluminum nitride films prepared by chemical vapor deposition
- 作者: Red’kin A.N.1, Ryzhova M.V.1, Yakimov E.E.1, Roshchupkin D.V.1
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隶属关系:
- Institute of Microelectronics Technology and High-Purity Materials
- 期: 卷 46, 编号 1 (2017)
- 页面: 26-29
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186204
- DOI: https://doi.org/10.1134/S1063739717010085
- ID: 186204
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详细
Textured polycrystalline aluminum nitride films are grown on a silica substrate by chemical vapor deposition using metallic aluminum and ammonium chloride as the initial reagents. The good texture and crystal quality of the prepared films are confirmed by raster electron microscopy, Raman spectroscopy, and X-ray diffraction.
作者简介
A. Red’kin
Institute of Microelectronics Technology and High-Purity Materials
编辑信件的主要联系方式.
Email: arcadii@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432
M. Ryzhova
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432
E. Yakimov
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432
D. Roshchupkin
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432
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