Investigation of textured aluminum nitride films prepared by chemical vapor deposition
- Авторы: Red’kin A.N.1, Ryzhova M.V.1, Yakimov E.E.1, Roshchupkin D.V.1
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Учреждения:
- Institute of Microelectronics Technology and High-Purity Materials
- Выпуск: Том 46, № 1 (2017)
- Страницы: 26-29
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186204
- DOI: https://doi.org/10.1134/S1063739717010085
- ID: 186204
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Аннотация
Textured polycrystalline aluminum nitride films are grown on a silica substrate by chemical vapor deposition using metallic aluminum and ammonium chloride as the initial reagents. The good texture and crystal quality of the prepared films are confirmed by raster electron microscopy, Raman spectroscopy, and X-ray diffraction.
Об авторах
A. Red’kin
Institute of Microelectronics Technology and High-Purity Materials
Автор, ответственный за переписку.
Email: arcadii@iptm.ru
Россия, Chernogolovka, Moscow region, 142432
M. Ryzhova
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
Россия, Chernogolovka, Moscow region, 142432
E. Yakimov
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
Россия, Chernogolovka, Moscow region, 142432
D. Roshchupkin
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
Россия, Chernogolovka, Moscow region, 142432
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