Investigation of textured aluminum nitride films prepared by chemical vapor deposition
- Autores: Red’kin A.N.1, Ryzhova M.V.1, Yakimov E.E.1, Roshchupkin D.V.1
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Afiliações:
- Institute of Microelectronics Technology and High-Purity Materials
- Edição: Volume 46, Nº 1 (2017)
- Páginas: 26-29
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186204
- DOI: https://doi.org/10.1134/S1063739717010085
- ID: 186204
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Resumo
Textured polycrystalline aluminum nitride films are grown on a silica substrate by chemical vapor deposition using metallic aluminum and ammonium chloride as the initial reagents. The good texture and crystal quality of the prepared films are confirmed by raster electron microscopy, Raman spectroscopy, and X-ray diffraction.
Sobre autores
A. Red’kin
Institute of Microelectronics Technology and High-Purity Materials
Autor responsável pela correspondência
Email: arcadii@iptm.ru
Rússia, Chernogolovka, Moscow region, 142432
M. Ryzhova
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
Rússia, Chernogolovka, Moscow region, 142432
E. Yakimov
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
Rússia, Chernogolovka, Moscow region, 142432
D. Roshchupkin
Institute of Microelectronics Technology and High-Purity Materials
Email: arcadii@iptm.ru
Rússia, Chernogolovka, Moscow region, 142432
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