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Modification of Zinc-Implanted Silicon by Swift Xenon Ion Irradiation
Privezentsev V., Skuratov V., Kulikauskas V., Makunin A., Ksenich S., Steinman E., Tereshchenko A., Goryachev A.
On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light
Ergashov Y., Tashmukhamedova D., Umirzakov B.
Influence of Zn+-Ion Implantation on the Process of Sapphire Charging by an Electron Beam
Tatarintsev A., Privezentsev V., Rau E., Goryachev A.
On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films
Umirzakov B., Donaev S.
Modification of YBa2Cu3O7–δ thin films by ion implantation
Vasiliev V., Korolev D., Korolev S., Masterov D., Mikhaylov A., Okhapkin A., Pavlov S., Parafin A., Yunin P., Skorokhodov E., Tetelbaum D.
Hydrogen-Permeability of Titanium-Nitride (TiN) Coatings Obtained via the Plasma-Immersion Ion Implantation of Titanium and TiN Vacuum-Arc Deposition on Zr−1%Nb Alloy
Zhang L., Nikitenkov N., Sutygina A., Kashkarov E., Sypchenko V., Babihina M.
Ion-Beam Synthesis of Ferromagnetic Films by the Implantation of Co+ Ions into Silicon
Chirkov V., Gumarov G., Petukhov V., Denisov A.
Formation of thin oxide layer on surface of copper caused by implantation of high-energy oxygen ions
Khaydukov Y., Soltwedel O., Marchenko Y., Khaidukova D., Csik A., Acartürk T., Starke U., Keller T., Guglya A., Kazdayev K.
Chemical composition and atomic structure of the surface of copper–manganese alloy modified with oxygen ions
Surnin D., Vorob’ev V., Gilmutdinov F., Mukhgalin V., Bakieva O., Kolotov A., Vetoshkin V.
Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation
Ergashov Y., Umirzakov B.
Influence of Plasma-Immersion Titanium-Ion Implantation on the Kinetics of Hydrogen Penetration into E110 Zirconium Alloy
Kashkarov E., Nikitenkov N., Sutygina A., Syrtanov M., Zakharchenko S., Obrosov A.
Formation of nanoparticles containing zinc in Si(001) by ion-beam implantation and subsequent annealing
Eidelman K., Shcherbachev K., Tabachkova N., Privezentsev V.
Study of a SiO2/Si Structure Implanted with 64Zn+ and 16O+ Ions and Heat Treated in a Neutral Inert Environment
Privezentsev V., Kulikauskas V., Zatekin V., Zinenko V., Agafonov Y., Egorov V., Steinman E., Tereshchenko A., Shcherbachev K.
Emission and optical properties of SiO2/Si thin films
Tashmukhamedova D., Yusupjanova M.
On the Phase Transformations and Field-Emission Properties of Diamond and Graphite Structures upon the Ion Implantation of Nitrogen
Yafarov R., Smirnov A., Yafarov A.
Influence of Preliminary Irradiation by a High Heat Flux on the Re-emission and Thermal Desorption of Deuterium Implanted from Reduced Activation Steels
Ryabtsev S., Gasparyan Y., Ogorodnikova O., Harutyunyan Z., Klimov N., Poskakalov A., Pisarev A.
Radiation-induced modification of reflection spectra beyond the ion path region in polyimide films
Brinkevich D., Kharchenko A., Brinkevich S., Lukashevich M., Odzhaev V., Valeev V., Nuzhdin V., Khaibullin R.
Influence of annealing temperature and its atmosphere on the properties of zinc implanted silicon
Privezentsev V., Kulikauskas V., Zatekin V., Shcherbachev K., Tabachkova N., Eidelman K., Ksenich S., Batrakov A.
Investigation of an ion-implanted semiconductor layer by X-ray fluorescence analysis and ellipsometry
Kalmykov S.
Microstructured Substrates for Counting Bacteria Formed by Ion Implantation Through a Mask
Evtyugin V., Rogov A., Valeeva L., Salnikov V., Osin Y., Valeev V., Nuzhdin V., Stepanov A.
Application of ion implantation for the modification of silicon-on-sapphire epitaxial systems, their structure, and properties
Aleksandrov P., Demakov K., Shemardov S., Belova N.
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