Email this article Emission and optical properties of SiO2/Si thin films
- Authors: Tashmukhamedova D.A.1, Yusupjanova M.B.1
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Affiliations:
- Tashkent State Technical University
- Issue: Vol 10, No 6 (2016)
- Pages: 1273-1275
- Section: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/190552
- DOI: https://doi.org/10.1134/S1027451016050438
- ID: 190552
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Abstract
The energy-band parameters and the emission and optical properties of SiO2/Si films of different thicknesses prepared by thermal oxidation and ion bombardment are studied. It is shown that the band gap Eg of the SiO2/Si film with a thickness of 30–40 Å is 8.8–8.9 eV. In the transition layer, the Eg value and secondary-electron emission coefficient σm steadily decrease with increasing depth.
About the authors
D. A. Tashmukhamedova
Tashkent State Technical University
Author for correspondence.
Email: ftmet@mail.ru
Uzbekistan, Tashkent, 100095
M. B. Yusupjanova
Tashkent State Technical University
Email: ftmet@mail.ru
Uzbekistan, Tashkent, 100095
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