Modification of Zinc-Implanted Silicon by Swift Xenon Ion Irradiation

Аннотация

50 keV ⁶⁴Zn⁺ ions to a dose of 5 × 10¹⁶ cm^–2 are implanted into substrates of single-crystal n-type silicon. Then the samples are irradiated at room temperature with 167 MeV ¹³²Xe²⁶⁺ ions with a fluence ranging from 1 ×10¹² up to 5 × 10¹⁴ cm^–2. Changes in the structure and properties on the sample surface and in its body are studied by scanning electron microscopy, energy dispersive microanalysis, atomic force microscopy, time-of-flight secondary ion mass spectrometry, and photoluminescence.