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Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation
Ergashov Y.S., Umirzakov B.E.
Application of ion implantation for the modification of silicon-on-sapphire epitaxial systems, their structure, and properties
Aleksandrov P.A., Demakov K.D., Shemardov S.G., Belova N.E.
Effect of Co+-ion implantation on the composition and properties of free Si–Cu nanofilm structures
Isakhanov Z.A., Kodirov T., Halmatov A.S., Ruzibaeva M.K., Muhtarov Z.E., Umirzakov B.E.
Microstructured Substrates for Counting Bacteria Formed by Ion Implantation Through a Mask
Evtyugin V.G., Rogov A.M., Valeeva L.R., Salnikov V.V., Osin Y.N., Valeev V.F., Nuzhdin V.I., Stepanov A.L.
Hydrogen-Permeability of Titanium-Nitride (TiN) Coatings Obtained via the Plasma-Immersion Ion Implantation of Titanium and TiN Vacuum-Arc Deposition on Zr−1%Nb Alloy
Zhang L., Nikitenkov N.N., Sutygina A.N., Kashkarov E.B., Sypchenko V.S., Babihina M.N.
On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films
Umirzakov B.E., Donaev S.B.
Emission and optical properties of SiO2/Si thin films
Tashmukhamedova D.A., Yusupjanova M.B.
On the Phase Transformations and Field-Emission Properties of Diamond and Graphite Structures upon the Ion Implantation of Nitrogen
Yafarov R.K., Smirnov A.V., Yafarov A.R.
On the Implantation of Protons into Silicon Plates in the Case of a Mechanically Stressed Surface Layer
Dyachkova I.G., Novoselova E.G., Smirnov I.S.
Influence of annealing temperature and its atmosphere on the properties of zinc implanted silicon
Privezentsev V.V., Kulikauskas V.S., Zatekin V.V., Shcherbachev K.D., Tabachkova N.Y., Eidelman K.B., Ksenich S.V., Batrakov A.A.
Formation of nanoparticles containing zinc in Si(001) by ion-beam implantation and subsequent annealing
Eidelman K.B., Shcherbachev K.D., Tabachkova N.Y., Privezentsev V.V.
Study of a SiO2/Si Structure Implanted with 64Zn+ and 16O+ Ions and Heat Treated in a Neutral Inert Environment
Privezentsev V.V., Kulikauskas V.S., Zatekin V.V., Zinenko V.I., Agafonov Y.A., Egorov V.K., Steinman E.A., Tereshchenko A.N., Shcherbachev K.D.
Influence of Plasma-Immersion Titanium-Ion Implantation on the Kinetics of Hydrogen Penetration into E110 Zirconium Alloy
Kashkarov E.B., Nikitenkov N.N., Sutygina A.N., Syrtanov M.S., Zakharchenko S.A., Obrosov A.
On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light
Ergashov Y.S., Tashmukhamedova D.A., Umirzakov B.E.
Modification of YBa2Cu3O7–δ thin films by ion implantation
Vasiliev V.K., Korolev D.S., Korolev S.A., Masterov D.V., Mikhaylov A.N., Okhapkin A.I., Pavlov S.A., Parafin A.E., Yunin P.A., Skorokhodov E.V., Tetelbaum D.I.
Ion-Track Modification of a Silicon-Dioxide Film Implanted with Zinc Ions and Annealed in Oxygen
Privezentsev V.V., Palagushkin A.N., Skuratov V.A., Kulikauskas V.S., Zatekin V.V., Makunin A.V., Kiselev D.A., Steinman E.A., Tereshchenko A.N.
Influence of Zn+-Ion Implantation on the Process of Sapphire Charging by an Electron Beam
Tatarintsev A.A., Privezentsev V.V., Rau E.I., Goryachev A.V.
Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions
Rysbaev A.S., Khujaniyozov J.B., Bekpulatov I.R., Rakhimov A.M., Pardaev O.R.
Chemical composition and atomic structure of the surface of copper–manganese alloy modified with oxygen ions
Surnin D.V., Vorob’ev V.L., Gilmutdinov F.Z., Mukhgalin V.V., Bakieva O.R., Kolotov A.A., Vetoshkin V.M.
Structure and Phase Composition of Multilayer AlN/SiN Films Irradiated with Helium Ions
Uglov V.V., Shymanski V.I., Korenevski E.L., Remnev G.E., Kvasov N.T.
Ion-Beam Synthesis of Ferromagnetic Films by the Implantation of Co+ Ions into Silicon
Chirkov V.V., Gumarov G.G., Petukhov V.Y., Denisov A.E.
Influence of the plasma-immersion ion implantation of titanium on the structure, morphology, and composition of the surface layer of Zr–1Nb alloy
Sutygina A.N., Nikitenkov N.N., Kashkarov E.B., Syrtanov M.S., Volesky L., Louda P., Priamushko T.S., Sypchenko V.S., Hashhash A.
On the processes upon the second-photon-stimulated annealing of InAs layers implanted with Be+ ions
Artamonov A.V., Astakhov V.P., Karpov V.V.
Influence of Preliminary Irradiation by a High Heat Flux on the Re-emission and Thermal Desorption of Deuterium Implanted from Reduced Activation Steels
Ryabtsev S.A., Gasparyan Y.M., Ogorodnikova O.V., Harutyunyan Z.R., Klimov N.S., Poskakalov A.G., Pisarev A.A.
Method for additional purification of the surface of Si(111) single crystal
Risbaev A.S., Khujaniyazov J.B., Bekpulatov I.R., Rakhimov A.M.
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