On the Implantation of Protons into Silicon Plates in the Case of a Mechanically Stressed Surface Layer

Abstract

The effect of mechanical stresses of different signs on the formation of radiation defects in crystalline silicon is studied alongside the effect of strain on the accumulation of radiation defects in KEF-4.5 silicon after the implantation of protons with an energy of 140 and 500 keV and a dose of 2.5 × 10¹⁵ cm^–2. The stress-strain state of a thin circular plate with a strained surface layer is calculated. It is shown that the applied mechanical stresses generally have an effect on the thickness of the damaged layer, whose thickness decreases with an increase in compressive stresses near the surface in comparison with its thickness in the undamaged sample and grows in the opposite case.