The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits

封面

如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The model is proposed to explain the effects of low dose rate under the radiation influence in bipolar structures, taking into account the effects of subthreshold displacement in high-doped silicon layers. The base current degradation of bipolar transistor is determined of surface and displacement radiation effects in the near-surface base area. The conditions for the enhanced low dose rate sensitivity (ELDRS) in bipolar structures are shown. The presented results of the analysis allow us to explain most of the observed experimental results.

全文:

受限制的访问

作者简介

A. Chumakov

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow JSC Specialized Electronic Systems

编辑信件的主要联系方式.
Email: aichum@spels.ru
俄罗斯联邦, Moscow

参考

  1. Nowlin R.N. et al. Hardness assurance and testing issues for bipolar/BiCMOS devices // IEEE Trans. Nucl. Sci. 1993. V. 40. No. 6. P. 1686–1691.
  2. Ionizing radiation effects in MOS devices and circuits / Ed. Ma T.-P., Dressendorfer P. V. New York: John Wiley&Sons, 1989. 608 p.
  3. Adell P.C., Boch J. Dose and Dose-Rate Effects in Micro-Electronics: Pushing the Limits to Extreme Conditions // 2014 IEEE NSREC. Short Course Notebook “Radiation Environments and Their Effects on Devices From Space to Ground”. Paris, France, 2014. P. II-1—II-102.
  4. Belyakov V.V. et al. Methods for the prediction of total-dose effects on modern integrated semiconductor devices in space: a review // Russian Microelectronics. 2003. V. 32. No. 1. P. 25–38.
  5. Pershenkov V.S., Skorobogatov P.K. Ulimov V.N. Dose effects in modern microelectronics products: Tutorial. NRNU MEPhI, 2011172 p. [in Russian].
  6. Pershenkov V.S. Dose effects in microelectronics products under irradiation // Radiation Hardness of electronic components / Ed. by. Chumakov A. I. NRNU MEPhI, 2015. 512 p. [in Russian]. P. 93–130.
  7. Pease R.L. et al. ELDRS in Bipolar Linear Circuits: A Review // IEEE Trans. Nucl. Sci. 2009. V. 56. No. 4. P. 1686–1691.
  8. Fleetwood D.M. et al. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates // IEEE Trans. Nucl. Sci. 1994. V. 41. No. 6. P. 1871–1883.
  9. Fleetwood D.M. et al. Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides // IEEE Trans. Nucl. Sci. 1996. V. 43. No. 6. P. 2537–2546.
  10. Rashkeev S.N. et al. Physical model for enhanced interface-trap formation at low dose rates. // IEEE Trans. Nucl. Sci. 2002. V. 49. No. 6. P. 2650–2655.
  11. Pershenkov V.S. et al. Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs // Russian Microelectronics. 2010. V. 39. No. 2. P. 91–99.
  12. Chumakov A.I. Space Radiation Effects in ICs. Moscow: Radio I Svyaz, 2004. 320 p. [in Russian].
  13. Vavilov V.S., Kiselev V.N., Mukashev B.F. Defects in silicon and on its surface. Moscow: Nauka, 1990. 216 p. (in Russian).
  14. Yemtsev V.V., Mashovets T.V. Impurities and point defects in semiconductors. Moscow: Radio I Svyaz, 1981. 248 p. [in Russian].
  15. Alyoshina L.A. The structure of amorphous materials and the nature of defects in them. Electronic Tutorial. PetrSU2016 [in Russian].
  16. Vavilov V.S., Kekelidze N. P., Smirnov L. S. The effect of radiation on semiconductors: Tutorial. Moscow: Nauka, 1988. 182 p. [in Russian].
  17. Sze. S.M. Physics of Semiconductor Devices. Second Edition. John Wiley and Sons Ltd, 1981.
  18. Pershenkov V.S. et al. Calculation of surface recombination current in bipolar microelectronic structures subjected to ionizing radiation // Russian Microelectronics. 2009. V. 38. No. 1. P. 17–29.

补充文件

附件文件
动作
1. JATS XML
下载
2. Fig.1.

下载 (47KB)
索引源数据
3. Fig.2.

下载 (79KB)
索引源数据
4. Fig.3.

下载 (80KB)
索引源数据
5. Fig.4.

下载 (84KB)
索引源数据
6. Fig.5.

下载 (185KB)
索引源数据

版权所有 © Russian Academy of Sciences, 2024

##common.cookie##