Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters

A. A. Lomov; Ломов А. А.; B. M. Seredin; Середин Б. М.; S. Yu. Martyushov; Мартюшов С. Ю.; A. A. Tatarintsev; Татаринцев А. А.; V. P. Popov; Попов В. П.; A. V. Malibashev; Малибашев А. В.

doi:10.31857/S0544126924020018

Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters

作者: Lomov A.¹, Seredin B.², Martyushov S.³, Tatarintsev A.¹, Popov V.², Malibashev A.²
隶属关系:
1. Valiev Institute of Physics and Technology of Russian Academy of Sciences
2. Platov South Russian State Polytechnic Institute (NPI)
3. Technological Institute for Superhard and Novel Carbon Materials
期: 卷 53, 编号 2 (2024)
页面: 119-131
栏目: ДИАГНОСТИКА
URL: https://journals.rcsi.science/0544-1269/article/view/262672
DOI: https://doi.org/10.31857/S0544126924020018
ID: 262672

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The results of a study of the structural features and electrical properties of Si(Al) through thermomigration p-channels in a silicon wafer are presented. Structural studies were performed using X-ray methods of projection topography, diffraction reflection curves and scanning electron microscopy. It is shown that the channel-matrix interface is coherent without the formation of mismatch dislocations. The possibility of using an array of thermomigration p-channels of 15 elements to form a monolithic photovoltaic solar module in a Si(111) silicon wafer based on p-channels with a width of 100 microns with walls in the plane is shown. The monolithic solar module has a conversion efficiency of 13.1%, an idle voltage of 8.5 V and a short-circuit current density of 33 mA/cm².

关键词

thermomigration, p—n junction, silicon, aluminum, X-ray topography, X-ray rocking curve, U—I—R properties, high voltage solar module

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Markvart T., Castafier L. Practical Handbook of Photovoltaics: Fundamentals and Applications. Oxford — New York — Tokyo: Elsevier Science Ltd., 2003. 984 р.
Philipps S.P., Cristóbal López A., Martí Vega A., López L. Present Status in the Development of III—V Multi-Junction Solar Cells, Next Generation of Photovoltaics, Springer Series in Optical Sciences. 2012. V. 165. Berlin, Heidelberg: Springer. https://doi.org/10.1007/978-3-642-23369-2_1
Da X., Chen C., Deng Y., Wood A., Yang G., Fei C., Huang J. Pathways to High Efficiency Perovskite Monolithic Solar Modules // PRX ENERGY. 2022. V. 1. Р. 013004. https://doi.org/10.1103/PRXEnergy.1.013004
Ryan C.Ch., Remco W.A., Havenith Jan. C., Hummelen L., Koster Jan A., Loi M.A. Modern Plastic Solar Cells: materials, mechanisms and modeling // Materials Today. 2013. V. 16. P. 281.
France R.M., Geisz J.F., Song T., Olavarria W., Young M., Kibbler A., Steiner M.A. Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices // Joule. 2022. V. 6. No. 5. Р. 1121–1135. https://doi.org/10.1016/j.joule.2022.04.024
Anthony T.R., Cline H.E. Lamellar devices processed by thermomigration // J. Appl. Phys. 1977. V. 48. P. 3943–3949.
Pfann W.G. Zone Melting. 2nd Ed. New York: Wiley, 1963. 236 p.
Lozovskii V.N., Lunin L.S., Popov V.P. Zonnaya perekristallizaciya gradientom temperatury poluprovodnikovyh materialov. M.: Metallurgiya, 1987. 232 p. [in Russian].
Lozovskii V.N., Udaynskaya A.I. Investigation of the Mechanism of Silicon Crystallization from an Aluminum-Silicon Melt by Temperature Gradient Zone Melting // Sov. Phys. Crystallography. 1968. V. 13. No. 3. P. 565–566.
Lozovskii V.N., Popov V.P. On the stability of the growth front during crystallization by the moving solvent method // Sov. Phys. Crystallography. 1970. V. 15. No. 1. P. 149–154.
Cline H.E., Anthony T.R. Thermomigration of aluminum-rich liquid wires through silicon // J. Appl. Phys. 1976. V. 47. No. 6. P. 2332–2336.
Buchin E.Y., Denisenko Y.I., Simakin S.G. The structure of thermomigration channels in silicon // Tech. Phys. Lett. 2004. V. 30. No. 3. P. 205–207.
Norskog A.C., Warner Jr.R.M. A horizontal monolithic series-array solar battery employing thermomigration // J. Appl. Phys. 1981. V. 52. No. 3. P. 1552–1554.
Lozovskii V.N., Lomov A.A., Lunin L.S., Seredin B.M., Chesnokov Yu.M. Crystal Defects in Solar Cells Produced by the Method of Thermomigration // Semiconductors. 2017. V. 51. No. 3. P. 285–289.
Eslamian M., Saghir M.Z. Thermodiffusion Applications in MEMS, NEMS and Solar Cell Fabrication by Thermal Metal Doping of Semiconductors // FDMP. 2012. V. 8. No. 4. P. 353–380.
Renyan W.R. Silicon Semiconductor Technology. McGraw-Hill: McGRAW — Hill Book Company, 1965. 277 p.
Jasurbek G., Rayimjon A., Bobur R. Effect of the Local Mechanical Stress on Properties of Silicon Solar Cell // J. of Mech. Eng. Res. and Devel. 2021. V. 44. No. 9. P. 125–133.
Lomov A.A., Punegov V.I., Seredin B.M. Laue X-ray diffraction studies of the structural perfection of Al-doped thermomigration channels in silicon // J. Appl. Cryst. 2021. V. 54. P. 588–596. https://doi.org/10.1107/S1600576721001473
Lomov A.A., Punegov V.I., Belov A.Yu., Seredin B.M. High resolution X-ray Bragg diffraction in Al-doped thermomigration channels in silicon // J. Appl. Cryst. 2022. V. 55. P. 558–568. https://doi.org/10.1107/S1600576722004319
Morillon B. Etude de la thermomigration de l’aluminium dans le silicium pour la réalisation industrielle de murs d’isolation dans les composants de puissance bidirectionnels. Doct. Thesis, Toulouse: INSA de Toulouse, 2002. https://tel.archives-ouvertes. fr/tel-00010945/
Seredin B.M., Lomov A.A., Zaichenko A.N., Gavrus I.V., Pashchenko A.S., Malibashev A.V., Ruban L.V. Elektricheskie svojstva kremnievyh vysokovol’tnyh fotopreobrazovatelej na osnove skvoznyh termomigracionnyh kanalov // Fizika. Sankt-Peterburg: Politekh-Press, 2021. P. 456–458 [in Russian].
Seredin B.M., Popov V.P., Gavrus I.V., Zaichenko A.N. Primenenie lokal’noj perekristallizacii kremniya alyuminiem v fotovol’taike // Mokerovskie chteniya. Moskva: NIYAU MIFI, 2023. P. 146–147 [in Russian].
Lozovskij V.N., Popov V.P., Darovskij N.I. Startovaya nestabil’nost’ linejnyh i tochechnyh zon pri zonnoj plavke s gradientom temperatury. Sbornik Trudov, Kristallizaciya i Svojstva Kristallov. Novocherkassk, 1970. V. 208. P. 39–43 [in Russian].
Poluhin A.S. Termomigraciya neorientirovannyh linejnyh zon v kremnievyh plastinah (100) dlya proizvodstva chipov silovyh poluprovodnikovyh priborov // Komponenty i tekhnologii. 2008. No. 11. P. 97–100 [in Russian].
Yoshikawa T., Morita K. Solid Solubilities and Thermodynamic Properties of Aluminum in Solid Silicon // J. Elect. Society. 2003. V. 150. No. 8. https//doi: 10.1149/1.1588300
Seredin B. M., Kuznetsov V. V., Lomov A. A., Zaichenko A.N., Martyushov S.Yu. Precision silicon doping with acceptors by temperature gradient zone melting // J. Phys: Conf. Series. 2019. P. 39–46.
Bowen D.K., Tanner B.K. High Resolution X-ray Diffractometry and Topography. London, Bristol: Taylor & Francis, 1998. 252 p.
Sah C.T., Noyce R.N., Shockley W. Carrier Generation and Recombination in p—n Junction and p—n Junction Characteristics // Proceedings of the IRE. 1957. V. 45. No. 9. P. 1228–1243.
Sze S. M., Kwok K. Ng. Physics of semiconductor devices // A. John Wiley & Sons. Inc. Publ. 2007. 832 p.
Lomov A.A., Seredin B.M., Martyushov C. Yu., Zaichenko A.N., Shul’pina I.L. The Formation and Structure of Thermomigration Silicon Channels Doped with Ga // Technical Physics. 2021. V. 66. No. 3. P. 453–460. https://doi.org/10.1134/S1063784221030178