Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters

A. A. Lomov; Ломов А. А.; B. M. Seredin; Середин Б. М.; S. Yu. Martyushov; Мартюшов С. Ю.; A. A. Tatarintsev; Татаринцев А. А.; V. P. Popov; Попов В. П.; A. V. Malibashev; Малибашев А. В.

doi:10.31857/S0544126924020018

Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters

Авторлар: Lomov A.¹, Seredin B.², Martyushov S.³, Tatarintsev A.¹, Popov V.², Malibashev A.²
Мекемелер:
1. Valiev Institute of Physics and Technology of Russian Academy of Sciences
2. Platov South Russian State Polytechnic Institute (NPI)
3. Technological Institute for Superhard and Novel Carbon Materials
Шығарылым: Том 53, № 2 (2024)
Беттер: 119-131
Бөлім: ДИАГНОСТИКА
URL: https://journals.rcsi.science/0544-1269/article/view/262672
DOI: https://doi.org/10.31857/S0544126924020018
ID: 262672

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Аннотация
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Әдебиет тізімі
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Статистика

Аннотация

The results of a study of the structural features and electrical properties of Si(Al) through thermomigration p-channels in a silicon wafer are presented. Structural studies were performed using X-ray methods of projection topography, diffraction reflection curves and scanning electron microscopy. It is shown that the channel-matrix interface is coherent without the formation of mismatch dislocations. The possibility of using an array of thermomigration p-channels of 15 elements to form a monolithic photovoltaic solar module in a Si(111) silicon wafer based on p-channels with a width of 100 microns with walls in the plane is shown. The monolithic solar module has a conversion efficiency of 13.1%, an idle voltage of 8.5 V and a short-circuit current density of 33 mA/cm².

Негізгі сөздер

thermomigration, p—n junction, silicon, aluminum, X-ray topography, X-ray rocking curve, U—I—R properties, high voltage solar module

Толық мәтін

Әдебиет тізімі

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