Method for testing the radiation resistance of semiconductor electronic materials in an electron microscope

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Аннотация

It is considered the possibility of using electron irradiation to simulate gamma irradiation. This paper presents a method for calculating the absorbed energy of electrons in various materials across a wide range of atomic numbers, as well as converting this energy into an absorbed dose equivalent to the kerma of gamma radiation. The main parameters of the presented model are the effective atomic number of the target (Z eff), its density (ρ), and the electron energy ( E 0 ). To convert the absorbed dose, it is also necessary to consider the electron flux (F) and the thickness of the investigated layer. The results of electron irradiation with energies of several keV and gamma irradiation are compared. The paper discusses the specifics of radiation effects on modern high-k dielectric materials and considers the limitations and modifications of the existing testing methods for microelectronic structures, including the need to consider multilayer structures and the decrease in electron flux with increasing sample depth.

Авторлар туралы

V. Kiselevskiy

National Research Center “Kurchatov Institute” – K.A. Valiev Institute of Physics and Technology

Email: sevakiselevskiy@yandex.ru
Moscow, Russia

A. Tatarintsev

National Research Center “Kurchatov Institute” – K.A. Valiev Institute of Physics and Technology

Email: tatarintsev@ftian.ru
Moscow, Russia

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