On the influence of various oxygen-containing gases on composition of trifluoromethane plasma
- Авторлар: Efremov A.M.1,2, Koryakova E.E.1, Betelin V.B.2, Kwon K.H.3
-
Мекемелер:
- Molecular Electronics Research Institute
- Scientific Research Institute for System Analysis of the National Research Centre “Kurchatov Institute”
- Korea University
- Шығарылым: Том 54, № 5 (2025)
- Беттер: 438-446
- Бөлім: ТЕХНОЛОГИИ
- URL: https://journals.rcsi.science/0544-1269/article/view/353911
- DOI: https://doi.org/10.7868/S3034548025050073
- ID: 353911
Дәйексөз келтіру
Аннотация
Негізгі сөздер
Авторлар туралы
A. Efremov
Molecular Electronics Research Institute; Scientific Research Institute for System Analysis of the National Research Centre “Kurchatov Institute”
Email: amefremov@mail.ru
Zelenorgad, Moscow, Russia; Moscow, Russia
E. Koryakova
Molecular Electronics Research InstituteZelenorgad, Moscow, Russia
V. Betelin
Scientific Research Institute for System Analysis of the National Research Centre “Kurchatov Institute”Moscow, Russia
K. Kwon
Korea UniversityChochiwon, Korea
Әдебиет тізімі
- Wolf S., Tauber R.N. Silicon Processing for the VLSI Era. Volume 1. Process Technology. Lattice Press, New York, 2000. 416 p.
- Rooth J.R. Industrial Plasma Engineering. IOP Publishing LTD. Philadelphia. 2001. 658 p.
- Valeev A.S., Krasnikov G. Y . Manufacturing technology of intra- and interchip interconnects for modern ULSIs: Review and concepts of development // Russian Microelectronics, 2015. Vol. 44. No. 3. pp. 18 0–201.
- Lieberman M.A., Lichtenberg A.J . Principles of plasma discharges and materials processing. John Wiley & Sons Inc., New York, 1994. 757 p.
- Roosmalen A.J., Baggerman J.A.G. and Brad er S.J.H . Dry etching for VLSI. Plenum Press, New-York, 1991. 490 p.
- Coburn J.W., Kay E . Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds // IBM Journal of Research and Development . 1979. Vol. 23. No. 1. pp. 33–41.
- Proshina O., Rakhimova T.V., Zotov ich A . et al . Multifold study of volume plasma chemistry in Ar/CF 4 and Ar/CHF 3 CCP discharges // Plasma Sources Sci. Technol ., 2017. Vol. 26. P. 075005.
- Efremov A.M., Murin D.B., Kwon K.-H . Features of the Kinetics of Bulk and Heterogeneous Processes in CHF 3 + Ar and C 4 F 8 + Ar Plasma Mixtures // Russian Microelectronics, 2019. Vol. 48. No. 2. pp. 119 –127.
- Efremov A.M., Murin D.B. , Kwon K.-H . Concerning the Effect of Type of Fluorocarbon Gas on the Output Characteristics of the Reactive-Ion Etching Process // Russian Microelectronics, 2020. Vol. 49. No. 3. pp. 157–165.
- Efremov A., Lee B.J., Kwon K.-H ., On relationships between gas-phase chemistry and reactive-ion etching kinetics for silicon-based thin films (SiC, SiO 2 and Si x N y ) in multi-component fluorocarbon gas mixtures // Materials, 2021. Vol. 14. pp. 1432(1–27).
- Baek S.Y., Efremov A., Bobyl ev A. et al . On relationships between plasma chemistry and surface reaction kinetics providing the etching of silicon in CF 4 , CHF 3 , and C 4 F 8 gases mixed with oxygen // Materials, 2023. Vol. 16. pp. 5043(1–18).
- Efremov A.M., Bashmakova D .E., Kwon K.-H . Features of plasma composition and fluorine atom kinetics in CHF 3 + O 2 gas mixture. // [ Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol . ] ChemChemTech . 2023. Vol. 66. No. 1. pp. 48–55.
- Shun’ko E.V . Langmuir probe in theory and practice. Universal Publishers. Boca Raton. 2008. 245 p.
- Engeln R., Klarenaar B., Guaitella O ., Foundations of optical diagnostics in low-temperature plasmas // Plasma Sources Sci. Technol . , 2020. Vol. 29. pp. 063001(1–14).
- Lopaev D.V., Volyne ts A.V., Zyryanov S.M., Zotovich A.I., Rakhimov A. T . Actinometry of O, N and F atoms // J. Phys. D: Appl. Phys . , 2017. Vol. 50. pp. 075202(1 –17).
- Ho P., Johannes J.E ., Buss R.J . Modeling the plasma chemistry of C 2 F 6 and CHF 3 etching of silicon dioxide, with comparisons to etch rate and diagnostic data // J. Vac. Sci. Technol. A . 2001. Vol. 19. pp. 2344–2367.
- Hsu C.C., Nierode M.A ., Coburn J.W., Graves D.B . Comparison of model and experiment for Ar, Ar/O 2 and Ar/O 2 /Cl 2 inductively coupled plasmas // J. Phys. D Appl. Phys . 2006. Vol. 39. No. 15. pp. 3272–3284.
- Raju G.G . Gaseous electronics. Tables, Atoms and Molecules. CRC Press, Boca Raton. 2012. 790 p.
- Christophorou L.G., Olthoff J.K . Fundamental electron interactions with plasma processing gases. Springer Science+Business Media LLC, New York. 2004. 776 p.
- Ling L., Hua X., Li X. et al . Study of C 4 F 8 /CO and C 4 F 8 /Ar/CO plasmas for highly selective etching of organosilicate glass over Si 3 N 4 and SiC // J. Vac. Sci. Technol. A, 2004. Vol. 22. No. 2. pp. 236–244.
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