Russian Microelectronics
ISSN (print): 0544-1269
Founders: Physico-Technical Institute of the Russian Academy of Sciences, Russian Academy of Sciences
Editor-in-Chief: Gennady Yakovlevich Krasnikov, Academician of the Russian Academy of Sciences, Doctor of Technical Sciences
Frequency / Access: 6 issues per year / Subscription
Indexation: White List (2nd level), Higher Attestation Commission List, RISC
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Vol 54, No 5 (2025)
ДИАГНОСТИКА
Method for testing the radiation resistance of semiconductor electronic materials in an electron microscope
Abstract
It is considered the possibility of using electron irradiation to simulate gamma irradiation. This paper presents a method for calculating the absorbed energy of electrons in various materials across a wide range of atomic numbers, as well as converting this energy into an absorbed dose equivalent to the kerma of gamma radiation. The main parameters of the presented model are the effective atomic number of the target (Z eff), its density (ρ), and the electron energy ( E 0 ). To convert the absorbed dose, it is also necessary to consider the electron flux (F) and the thickness of the investigated layer. The results of electron irradiation with energies of several keV and gamma irradiation are compared. The paper discusses the specifics of radiation effects on modern high-k dielectric materials and considers the limitations and modifications of the existing testing methods for microelectronic structures, including the need to consider multilayer structures and the decrease in electron flux with increasing sample depth.
Russian Microelectronics. 2025;54(5):347-356
347-356
Complementary studies of aluminum thin films: resistivity and real structure
Abstract
The article presents the results of comprehensive studies on the temperature dependence of the electrical resistance of thin magnetron Al films, examining their structural characteristics, including morphology, surface roughness, microstructure, and density. To establish a fundamental relationship between the specific resistance and structural features of the films, they were deposited on standard Si(111) substrates in a two-stage growth mode with the formation of homobuffer layers in the temperature range from 293 to 800 K. Structural characterization of the samples was performed using scanning force and electron microscopy, X-ray diffractometry and X-ray reflectometry. It is demonstrated that the value and temperature dependence of the specific resistance of aluminium films can be altered by varying the growth conditions of the homobuffer layer, enabling the deposition of films with different density profiles across their thickness. The magnetron 120-nm aluminium film on a 700 K homobuffer layer with a constant density of 2.66 g/cm 3 is found to have a specific resistance of ρ RT = 2.69 μOhm cm and T c = 1.22 K. Al films with variable density exhibited a residual resistivity of 30 μΩ · cm. The primary contribution to the resistance of such films is made by intergranular regions with lower density. These regions are reliably detected by the X-ray reflectometry technique.
Russian Microelectronics. 2025;54(5):357-370
357-370
КВАНТОВЫЕ ТЕХНОЛОГИИ
Precise reconstruction of polarization quantum states under noisy measurement conditions
Abstract
An accurate model for the reconstruction of polarization quantum states under noisy measurement conditions is developed. To ensure correct analysis of quantum state readout, a mathematical model of fuzzy measurements is applied. It is demonstrated that the proposed method significantly improves the fidelity of polarization state reconstruction taking into account quantum noise and decoherence processes.
Russian Microelectronics. 2025;54(5):371-380
371-380
МОДЕЛИРОВАНИЕ
On the correctness of the model description of the plasma composition in the mixture of SF 6 + He + O 2
Abstract
A comprehensive (experimental and model) study of the composition of the neutral and charged components of SF 6 + He + O 2 plasma was carried out with varying He/O 2 ratio. Key processes that form stationary concentrations of fluorine and oxygen atoms under conditions of excess fluorine-containing particles were identified. It was shown that the corrected (refined based on the results of recent studies and supplemented with previously unaccounted for processes) kinetic scheme ensures satisfactory agreement between the calculated atomic concentrations and the values obtained from the results of optical-spectral diagnostics of the plasma.
Russian Microelectronics. 2025;54(5):381-392
381-392
ПРИБОРЫ
Structure and materials of FinFET transistors
Abstract
This work provides a detailed review of the FinFET three-dimensional transistor technologies evolution. The features of the FinFET transistors formation by various manufacturers, as well as the materials used in them and the main approaches to improving the production technologies are considered. Analysis and comparison of the key characteristics of FinFET transistors produced using technology node from 22 to 3 nm have been conducted based on publicly available sources.
Russian Microelectronics. 2025;54(5):393-428
393-428
ТЕХНОЛОГИИ
Processing of Silicon Carbide Plates with Bonded Diamond Tools
Abstract
The article discusses the results obtained in the process of preliminary rough, fine and finish grinding of polycrystalline and monocrystalline silicon carbide plates using new types of bonded diamond tools on an organic binder and a new composition of cutting fluid.
Russian Microelectronics. 2025;54(5):429-437
429-437
On the influence of various oxygen-containing gases on composition of trifluoromethane plasma
Abstract
The model-based study of plasma composition in respect to neutral species in CHF 3 + O 2 , CHF 3 + СO и CHF 3 + СO 2 mixtures under the condition of inductive 13.56 MHz discharge at constant gas pressure (6 mTorr) and input power (700 W) was carried out. It was found that effects produced by additions of CO and CO 2 are sufficiently different compared with a “classical” case of CHF 3 + O 2 plasma, where an increase of plasma chemical activity as well as a rapid decrease in polymerization ability take place. The reasonability of obtained data was confirmed by the satisfactory agreement between model-predicted densities of fluorine atoms and their counterparts measured by optical emission actinometry.
Russian Microelectronics. 2025;54(5):438-446
438-446
Deformation of MEMS Transducer Membrane Due to Stress in Deposited Film
Abstract
Using the Ritz method, the maximum membrane deflection and the magnitude of mechanical stresses were calculated depending on the geometric dimensions of the membrane and the parameters of the deposited SiO 2 layer. A comparative assessment was made of the magnitude of deformation and mechanical stresses in the structure of an absolute pressure transducer with a polysilicon membrane radius of 50 μm and a “sandwich” structure of a MEMS acoustic pressure transducer consisting of polysilicon layers and deposited SiO 2 with a membrane radius of 300 μm, arising during the deposition of the SiO 2 layer.
Russian Microelectronics. 2025;54(5):447-458
447-458