Issue |
Section |
Title |
File |
Vol 52, No 2 (2016) |
Article |
Electronic structure and exchange interaction in Ga1–xMnxAs and In1–xMnxSb magnetic semiconductors |
|
Vol 52, No 3 (2016) |
Article |
Growth of eutectic composites in the InSb–MnSb system |
|
Vol 52, No 9 (2016) |
Article |
Topographic analysis of the surface of the GaSb〈Mn〉 magnetic semiconductor |
|
Vol 52, No 10 (2016) |
Article |
High-pressure phase transitions and structure of Al–20 at % Si hypereutectic alloy |
|
Vol 53, No 2 (2017) |
Article |
Solubility limits of manganese in InSb under equilibrium and nonequilibrium synthesis conditions |
|
Vol 53, No 8 (2017) |
Article |
Reactions of manganese oxides with sulfuric acid solutions studied by kinetic and electrochemical methods |
|
Vol 53, No 9 (2017) |
Article |
Structure of the order parameter in iron pnictide-based superconducting materials |
|
Vol 53, No 11 (2017) |
Article |
Controlling the phase composition of cadmium sulfide films during pulsed laser deposition |
|
Vol 53, No 11 (2017) |
Article |
Calculation of the electronic structure and exchange interaction in the InSb and GaAs semiconductors codoped with Mn and Ni |
|
Vol 53, No 11 (2017) |
Article |
Buried crescent InP/InGaAsP/InP heterostructure on p-InP for linear edge-emitting diodes |
|
Vol 54, No 1 (2018) |
Article |
Dissolution of Manganese Oxides of Various Compositions in Sulfuric Acid Solutions Studied by Kinetic Methods |
|
Vol 54, No 3 (2018) |
Article |
Thermal Conductivity of Tetragonal Cadmium Diphosphide Crystals |
|
Vol 54, No 11 (2018) |
Article |
Preparation of Indium Phosphide Substrates for Epilayer Growth |
|
Vol 55, No 1 (2019) |
Article |
Electronic Structure and Ferromagnetic Transition Temperature of Ga1– xMnxAs in the Nonempirical Local Exchange Method |
|
Vol 55, No 2 (2019) |
Article |
Preparation of Shaped Indium Phosphide Surfaces for Edge-Emitting Devices |
|
Vol 55, No 9 (2019) |
Article |
Physicochemical Principles Underlying the Synthesis of Granular Semiconductor–Ferromagnet Magnetic Structures Exemplified by AIIGeAs2 (AII = Zn, Cd) Materials |
|
Vol 55, No 9 (2019) |
Article |
Ferromagnetism of Alloys Based on Mn- and Ni-Doped Indium Antimonide |
|
Vol 55, No 9 (2019) |
Article |
Dislocation Magnetism of the GaSb〈Mn〉 Semiconductor |
|
Vol 55, No 9 (2019) |
Article |
Fabrication of ZnSe/InP Heterojunctions on Flat and Shaped Surfaces of InP Laser Crystals |
|
Vol 55, No 9 (2019) |
Article |
Phase Transformations of 1.4 at % Cu–Al Binary Alloy at High Pressures and Temperatures |
|
Vol 55, No 9 (2019) |
Article |
Comparison of Electrochemical and Semiconductor Parameters of the Electrical Double Layer at a Magnetite/Electrolyte Interface |
|
Vol 55, No 9 (2019) |
Article |
Structure of the Order Parameter of Topological Superconductors Based on 3d and 4d Transition Metal Oxides |
|