Electronic Structure and Ferromagnetic Transition Temperature of Ga 1   – x  Mn  x  As in the Nonempirical Local Exchange Method

Electronic Structure and Ferromagnetic Transition Temperature of Ga₁_{– x}Mn_xAs in the Nonempirical Local Exchange Method

Authors: Yarzhemsky V.G.¹, Murashov S.V.¹, Izotov A.D.¹
Affiliations:
1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Issue: Vol 55, No 1 (2019)
Pages: 1-8
Section: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158619
DOI: https://doi.org/10.1134/S0020168519010187
ID: 158619

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spintronic materials, diluted magnetic semiconductor, GaAs, Mn, density functional method, density of states, band structure

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Author for correspondence.
Email: vgyar@igic.ras.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Email: vgyar@igic.ras.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Email: vgyar@igic.ras.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991

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