Email this article Preparation of Indium Phosphide Substrates for Epilayer Growth
- Authors: Vasil’ev M.G.1, Vasil’ev A.M.1, Izotov A.D.1, Shelyakin A.A.1
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Affiliations:
- Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
- Issue: Vol 54, No 11 (2018)
- Pages: 1109-1112
- Section: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158553
- DOI: https://doi.org/10.1134/S0020168518110158
- ID: 158553
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Abstract
We have carried out an integrated study of technological steps in the preparation of indium phosphide substrates for the epitaxial growth of heterostructures. We have investigated the surface morphology and condition of indium phosphide in (100)-oriented substrates and tested various chemical etchants for final chemical surface processing. Our results demonstrate that an optimal substrate preparation process is two-step chemical–mechanical polishing on both sides using zeolite slurries, with chemical polishing in a mixture of bromine and isopropanol as the final step.
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About the authors
M. G. Vasil’ev
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Author for correspondence.
Email: mgvas@igic.ras.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991
A. M. Vasil’ev
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: mgvas@igic.ras.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991
A. D. Izotov
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: mgvas@igic.ras.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991
A. A. Shelyakin
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: mgvas@igic.ras.ru
Russian Federation, Leninskii pr. 31, Moscow, 119991
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