Fabrication of ZnSe/InP Heterojunctions on Flat and Shaped Surfaces of InP Laser Crystals
- 作者: Vasil’ev M.G.1, Vasil’ev A.M.1, Izotov A.D.1, Marenkin S.F.1, Pashkova O.N.1, Shelyakin A.A.1
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隶属关系:
- Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
- 期: 卷 55, 编号 9 (2019)
- 页面: 903-907
- 栏目: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158759
- DOI: https://doi.org/10.1134/S0020168519090188
- ID: 158759
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详细
We have studied the growth of zinc selenide layers on flat and shaped indium phosphide surfaces. The growth rate of zinc selenide has been shown to depend on substrate orientation. It has been shown that the present results can be useful in designing mesa stripe structures for quantum electronic instruments. We have fabricated mesa stripe laser diodes operating on the absorption band of methane and suitable for producing fiber-optic signal transmission systems.
作者简介
M. Vasil’ev
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991
A. Vasil’ev
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991
A. Izotov
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991
S. Marenkin
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991
O. Pashkova
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991
A. Shelyakin
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991
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