Fabrication of ZnSe/InP Heterojunctions on Flat and Shaped Surfaces of InP Laser Crystals

M. G. Vasil’ev; A. M. Vasil’ev; A. D. Izotov; S. F. Marenkin; O. N. Pashkova; A. A. Shelyakin

doi:10.1134/S0020168519090188

Fabrication of ZnSe/InP Heterojunctions on Flat and Shaped Surfaces of InP Laser Crystals

Authors: Vasil’ev M.G.¹, Vasil’ev A.M.¹, Izotov A.D.¹, Marenkin S.F.¹, Pashkova O.N.¹, Shelyakin A.A.¹
Affiliations:
1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Issue: Vol 55, No 9 (2019)
Pages: 903-907
Section: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158759
DOI: https://doi.org/10.1134/S0020168519090188
ID: 158759

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Abstract

We have studied the growth of zinc selenide layers on flat and shaped indium phosphide surfaces. The growth rate of zinc selenide has been shown to depend on substrate orientation. It has been shown that the present results can be useful in designing mesa stripe structures for quantum electronic instruments. We have fabricated mesa stripe laser diodes operating on the absorption band of methane and suitable for producing fiber-optic signal transmission systems.