Dislocation Magnetism of the GaSb〈Mn〉 Semiconductor


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The GaSb〈Mn〉 magnetic semiconductor has been studied using the visualization and analysis of electron-microscopic images of the material, an approach widely used in practice in making ultrastrong permanent magnets based on metallic alloys. The role of columnar magnetic crystals is assigned to manganese-decorated dislocations, and the role of a nonmagnetic matrix is played by the GaSb compound semiconductor. The material synthesized in this study has been characterized by X-ray diffraction, scanning electron microscopy, and magnetic measurements. The magnetization of a polished transverse section of GaSb〈Mn〉 has been analyzed as a function of the angle it makes with the magnetic flux direction and as a function of temperature in the range 4–300 K.

作者简介

V. Sanygin

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: sanygin@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991

A. Izotov

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Email: sanygin@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991

O. Pashkova

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Email: sanygin@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Inc., 2019