Buried crescent InP/InGaAsP/InP heterostructure on p-InP for linear edge-emitting diodes


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A process has been developed for the liquid phase epitaxy of mesa stripe buried crescent InP/InGaAsP/InP heterostructures with a pnpn/ZnSe leakage current-blocking structure. The salient feature of the process is a discontinuous mesa stripe which alternates with the structure of blocking layers. This technology allows one to fabricate linear edge-emitting diodes, mounted with the mesa stripe down or up, with an emission wavelength λ = 1.3–1.5 μm, high reproducibility, the possibility of coupling more than 50 μW of optical power into single-mode fiber at a current of 100 mA, an emission bandwidth of about 60 nm, and essentially negligible Fabry–Perot modulation.

作者简介

M. Vasil’ev

Kurnakov Institute of General and Inorganic Chemistry

编辑信件的主要联系方式.
Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991

A. Vasil’ev

Kurnakov Institute of General and Inorganic Chemistry

Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991

Yu. Kostin

Kurnakov Institute of General and Inorganic Chemistry

Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991

A. Shelyakin

Kurnakov Institute of General and Inorganic Chemistry

Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991

A. Izotov

Kurnakov Institute of General and Inorganic Chemistry

Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991

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