Buried crescent InP/InGaAsP/InP heterostructure on p-InP for linear edge-emitting diodes
- 作者: Vasil’ev M.G.1, Vasil’ev A.M.1, Kostin Y.O.1, Shelyakin A.A.1, Izotov A.D.1
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隶属关系:
- Kurnakov Institute of General and Inorganic Chemistry
- 期: 卷 53, 编号 11 (2017)
- 页面: 1170-1173
- 栏目: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158322
- DOI: https://doi.org/10.1134/S0020168517110164
- ID: 158322
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详细
A process has been developed for the liquid phase epitaxy of mesa stripe buried crescent InP/InGaAsP/InP heterostructures with a p–n–p–n/ZnSe leakage current-blocking structure. The salient feature of the process is a discontinuous mesa stripe which alternates with the structure of blocking layers. This technology allows one to fabricate linear edge-emitting diodes, mounted with the mesa stripe down or up, with an emission wavelength λ = 1.3–1.5 μm, high reproducibility, the possibility of coupling more than 50 μW of optical power into single-mode fiber at a current of 100 mA, an emission bandwidth of about 60 nm, and essentially negligible Fabry–Perot modulation.
作者简介
M. Vasil’ev
Kurnakov Institute of General and Inorganic Chemistry
编辑信件的主要联系方式.
Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991
A. Vasil’ev
Kurnakov Institute of General and Inorganic Chemistry
Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991
Yu. Kostin
Kurnakov Institute of General and Inorganic Chemistry
Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991
A. Shelyakin
Kurnakov Institute of General and Inorganic Chemistry
Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991
A. Izotov
Kurnakov Institute of General and Inorganic Chemistry
Email: mgvas@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991
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