Comprehensive Research on the Response of MIS Sensors of Pd‒SiO2‒Si and Pd‒Ta2O5‒SiO2‒Si Structures to Various Gases in Air


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Resumo

The response Pd–SiO2–Si and Pd–Ta2O5–SiO2–Si metal‒insulator‒semiconductor (MIS) sensors to H2, H2S, NO2, C2H5SH, NH3, and Cl2 in air was studied. The static and dynamic characteristics of the MIS sensors were obtained. The minimum detectable concentrations of the test gases were determined. It is shown that the MIS sensors are highly sensitive to the studied gases.

Sobre autores

B. Bolodurin

INKRAM Research and Production Company

Email: mikhailov@inkram.ru
Rússia, Lyublinskaya ul. 151, office XIII, rooms 67–68, Moscow, 109341

V. Korchak

Section for Problems

Email: mikhailov@inkram.ru
Rússia, Moscow

A. Litvinov

MEPhI National Research Nuclear University

Email: mikhailov@inkram.ru
Rússia, Moscow

A. Mikhailov

INKRAM Research and Production Company

Autor responsável pela correspondência
Email: mikhailov@inkram.ru
Rússia, Lyublinskaya ul. 151, office XIII, rooms 67–68, Moscow, 109341

D. Nozdrya

MEPhI National Research Nuclear University

Email: mikhailov@inkram.ru
Rússia, Moscow

Yu. Pomazan

Section for Problems

Email: mikhailov@inkram.ru
Rússia, Moscow

D. Filipchuk

INKRAM Research and Production Company; MEPhI National Research Nuclear University

Email: mikhailov@inkram.ru
Rússia, Lyublinskaya ul. 151, office XIII, rooms 67–68, Moscow, 109341; Moscow

M. Etrekova

INKRAM Research and Production Company; MEPhI National Research Nuclear University

Email: mikhailov@inkram.ru
Rússia, Lyublinskaya ul. 151, office XIII, rooms 67–68, Moscow, 109341; Moscow


Declaração de direitos autorais © Pleiades Publishing, Ltd., 2018

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