Comprehensive Research on the Response of MIS Sensors of Pd‒SiO2‒Si and Pd‒Ta2O5‒SiO2‒Si Structures to Various Gases in Air

Аннотация

The response Pd–SiO₂–Si and Pd–Ta₂O₅–SiO₂–Si metal‒insulator‒semiconductor (MIS) sensors to H₂, H₂S, NO₂, C₂H₅SH, NH₃, and Cl₂ in air was studied. The static and dynamic characteristics of the MIS sensors were obtained. The minimum detectable concentrations of the test gases were determined. It is shown that the MIS sensors are highly sensitive to the studied gases.