Comprehensive Research on the Response of MIS Sensors of Pd‒SiO2‒Si and Pd‒Ta2O5‒SiO2‒Si Structures to Various Gases in Air


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The response Pd–SiO2–Si and Pd–Ta2O5–SiO2–Si metal‒insulator‒semiconductor (MIS) sensors to H2, H2S, NO2, C2H5SH, NH3, and Cl2 in air was studied. The static and dynamic characteristics of the MIS sensors were obtained. The minimum detectable concentrations of the test gases were determined. It is shown that the MIS sensors are highly sensitive to the studied gases.

作者简介

B. Bolodurin

INKRAM Research and Production Company

Email: mikhailov@inkram.ru
俄罗斯联邦, Lyublinskaya ul. 151, office XIII, rooms 67–68, Moscow, 109341

V. Korchak

Section for Problems

Email: mikhailov@inkram.ru
俄罗斯联邦, Moscow

A. Litvinov

MEPhI National Research Nuclear University

Email: mikhailov@inkram.ru
俄罗斯联邦, Moscow

A. Mikhailov

INKRAM Research and Production Company

编辑信件的主要联系方式.
Email: mikhailov@inkram.ru
俄罗斯联邦, Lyublinskaya ul. 151, office XIII, rooms 67–68, Moscow, 109341

D. Nozdrya

MEPhI National Research Nuclear University

Email: mikhailov@inkram.ru
俄罗斯联邦, Moscow

Yu. Pomazan

Section for Problems

Email: mikhailov@inkram.ru
俄罗斯联邦, Moscow

D. Filipchuk

INKRAM Research and Production Company; MEPhI National Research Nuclear University

Email: mikhailov@inkram.ru
俄罗斯联邦, Lyublinskaya ul. 151, office XIII, rooms 67–68, Moscow, 109341; Moscow

M. Etrekova

INKRAM Research and Production Company; MEPhI National Research Nuclear University

Email: mikhailov@inkram.ru
俄罗斯联邦, Lyublinskaya ul. 151, office XIII, rooms 67–68, Moscow, 109341; Moscow


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