On Anomalously High Photosensitivity of CdS1 –xSex Granular Films
- Autores: Nefedkin N.E.1,2,3, Andrianov E.S.2,3, Pukhov A.A.1,2,3, Vinogradov A.P.1,2,3, Gurov S.V.1,2, Boginskaya I.A.1, Sedova M.V.1, Bykov I.V.1, Ryzhikov I.A.1
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Afiliações:
- Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
- Moscow Institute of Physics and Technology (State University)
- Dukhov All-Russia Research Institute of Automatics
- Edição: Volume 63, Nº 12 (2018)
- Páginas: 1449-1457
- Seção: Physical Processes in Electron Devices
- URL: https://journals.rcsi.science/1064-2269/article/view/199338
- DOI: https://doi.org/10.1134/S1064226918110062
- ID: 199338
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Resumo
An anomalously high photosensitivity of \({\text{Cd}}{{{\text{S}}}_{{{\text{1--}}x}}}{\text{S}}{{{\text{e}}}_{x}}\) granular films observed in the experiment is explained. It is assumed that the charge transfer mechanism based on surface states existing at the granule boundaries can be responsible for an anomalously high photocurrent-to-dark current ratio recently found in the study of the photoconductivity of \({\text{Cd}}{{{\text{S}}}_{{{\text{1--}}x}}}{\text{S}}{{{\text{e}}}_{x}}\) granular films. It has been shown that the current of charge carriers in surface states flowing through the gaps between the granules at a certain film topology can exceed by many orders of magnitude the current associated with tunneling of charge carriers between the granules.
Sobre autores
N. Nefedkin
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Email: andrianov.es@mipt.ru
Rússia, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
E. Andrianov
Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Autor responsável pela correspondência
Email: andrianov.es@mipt.ru
Rússia, Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
A. Pukhov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Email: andrianov.es@mipt.ru
Rússia, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
A. Vinogradov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Email: andrianov.es@mipt.ru
Rússia, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
S. Gurov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University)
Email: andrianov.es@mipt.ru
Rússia, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701
I. Boginskaya
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
Rússia, Moscow, 125412
M. Sedova
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
Rússia, Moscow, 125412
I. Bykov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
Rússia, Moscow, 125412
I. Ryzhikov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
Rússia, Moscow, 125412
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