On Anomalously High Photosensitivity of CdS1 –xSex Granular Films
- Авторы: Nefedkin N.1,2,3, Andrianov E.2,3, Pukhov A.1,2,3, Vinogradov A.1,2,3, Gurov S.1,2, Boginskaya I.1, Sedova M.1, Bykov I.1, Ryzhikov I.1
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Учреждения:
- Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
- Moscow Institute of Physics and Technology (State University)
- Dukhov All-Russia Research Institute of Automatics
- Выпуск: Том 63, № 12 (2018)
- Страницы: 1449-1457
- Раздел: Physical Processes in Electron Devices
- URL: https://journals.rcsi.science/1064-2269/article/view/199338
- DOI: https://doi.org/10.1134/S1064226918110062
- ID: 199338
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Аннотация
An anomalously high photosensitivity of \({\text{Cd}}{{{\text{S}}}_{{{\text{1--}}x}}}{\text{S}}{{{\text{e}}}_{x}}\) granular films observed in the experiment is explained. It is assumed that the charge transfer mechanism based on surface states existing at the granule boundaries can be responsible for an anomalously high photocurrent-to-dark current ratio recently found in the study of the photoconductivity of \({\text{Cd}}{{{\text{S}}}_{{{\text{1--}}x}}}{\text{S}}{{{\text{e}}}_{x}}\) granular films. It has been shown that the current of charge carriers in surface states flowing through the gaps between the granules at a certain film topology can exceed by many orders of magnitude the current associated with tunneling of charge carriers between the granules.
Об авторах
N. Nefedkin
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Email: andrianov.es@mipt.ru
Россия, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
E. Andrianov
Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Автор, ответственный за переписку.
Email: andrianov.es@mipt.ru
Россия, Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
A. Pukhov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Email: andrianov.es@mipt.ru
Россия, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
A. Vinogradov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Email: andrianov.es@mipt.ru
Россия, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
S. Gurov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University)
Email: andrianov.es@mipt.ru
Россия, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701
I. Boginskaya
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
Россия, Moscow, 125412
M. Sedova
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
Россия, Moscow, 125412
I. Bykov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
Россия, Moscow, 125412
I. Ryzhikov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
Россия, Moscow, 125412