On Anomalously High Photosensitivity of CdS1 –xSex Granular Films
- Авторлар: Nefedkin N.1,2,3, Andrianov E.2,3, Pukhov A.1,2,3, Vinogradov A.1,2,3, Gurov S.1,2, Boginskaya I.1, Sedova M.1, Bykov I.1, Ryzhikov I.1
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Мекемелер:
- Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
- Moscow Institute of Physics and Technology (State University)
- Dukhov All-Russia Research Institute of Automatics
- Шығарылым: Том 63, № 12 (2018)
- Беттер: 1449-1457
- Бөлім: Physical Processes in Electron Devices
- URL: https://journals.rcsi.science/1064-2269/article/view/199338
- DOI: https://doi.org/10.1134/S1064226918110062
- ID: 199338
Дәйексөз келтіру
Аннотация
An anomalously high photosensitivity of \({\text{Cd}}{{{\text{S}}}_{{{\text{1--}}x}}}{\text{S}}{{{\text{e}}}_{x}}\) granular films observed in the experiment is explained. It is assumed that the charge transfer mechanism based on surface states existing at the granule boundaries can be responsible for an anomalously high photocurrent-to-dark current ratio recently found in the study of the photoconductivity of \({\text{Cd}}{{{\text{S}}}_{{{\text{1--}}x}}}{\text{S}}{{{\text{e}}}_{x}}\) granular films. It has been shown that the current of charge carriers in surface states flowing through the gaps between the granules at a certain film topology can exceed by many orders of magnitude the current associated with tunneling of charge carriers between the granules.
Авторлар туралы
N. Nefedkin
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Email: andrianov.es@mipt.ru
Ресей, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
E. Andrianov
Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Хат алмасуға жауапты Автор.
Email: andrianov.es@mipt.ru
Ресей, Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
A. Pukhov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Email: andrianov.es@mipt.ru
Ресей, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
A. Vinogradov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Email: andrianov.es@mipt.ru
Ресей, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
S. Gurov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University)
Email: andrianov.es@mipt.ru
Ресей, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701
I. Boginskaya
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
Ресей, Moscow, 125412
M. Sedova
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
Ресей, Moscow, 125412
I. Bykov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
Ресей, Moscow, 125412
I. Ryzhikov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
Ресей, Moscow, 125412