On Anomalously High Photosensitivity of CdS1 –xSex Granular Films
- 作者: Nefedkin N.E.1,2,3, Andrianov E.S.2,3, Pukhov A.A.1,2,3, Vinogradov A.P.1,2,3, Gurov S.V.1,2, Boginskaya I.A.1, Sedova M.V.1, Bykov I.V.1, Ryzhikov I.A.1
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隶属关系:
- Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
- Moscow Institute of Physics and Technology (State University)
- Dukhov All-Russia Research Institute of Automatics
- 期: 卷 63, 编号 12 (2018)
- 页面: 1449-1457
- 栏目: Physical Processes in Electron Devices
- URL: https://journals.rcsi.science/1064-2269/article/view/199338
- DOI: https://doi.org/10.1134/S1064226918110062
- ID: 199338
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详细
An anomalously high photosensitivity of \({\text{Cd}}{{{\text{S}}}_{{{\text{1--}}x}}}{\text{S}}{{{\text{e}}}_{x}}\) granular films observed in the experiment is explained. It is assumed that the charge transfer mechanism based on surface states existing at the granule boundaries can be responsible for an anomalously high photocurrent-to-dark current ratio recently found in the study of the photoconductivity of \({\text{Cd}}{{{\text{S}}}_{{{\text{1--}}x}}}{\text{S}}{{{\text{e}}}_{x}}\) granular films. It has been shown that the current of charge carriers in surface states flowing through the gaps between the granules at a certain film topology can exceed by many orders of magnitude the current associated with tunneling of charge carriers between the granules.
作者简介
N. Nefedkin
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Email: andrianov.es@mipt.ru
俄罗斯联邦, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
E. Andrianov
Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
编辑信件的主要联系方式.
Email: andrianov.es@mipt.ru
俄罗斯联邦, Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
A. Pukhov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Email: andrianov.es@mipt.ru
俄罗斯联邦, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
A. Vinogradov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics
Email: andrianov.es@mipt.ru
俄罗斯联邦, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055
S. Gurov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University)
Email: andrianov.es@mipt.ru
俄罗斯联邦, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701
I. Boginskaya
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
俄罗斯联邦, Moscow, 125412
M. Sedova
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
俄罗斯联邦, Moscow, 125412
I. Bykov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
俄罗斯联邦, Moscow, 125412
I. Ryzhikov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: andrianov.es@mipt.ru
俄罗斯联邦, Moscow, 125412
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