On Anomalously High Photosensitivity of CdS1 –xSex Granular Films


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Abstract

An anomalously high photosensitivity of \({\text{Cd}}{{{\text{S}}}_{{{\text{1--}}x}}}{\text{S}}{{{\text{e}}}_{x}}\) granular films observed in the experiment is explained. It is assumed that the charge transfer mechanism based on surface states existing at the granule boundaries can be responsible for an anomalously high photocurrent-to-dark current ratio recently found in the study of the photoconductivity of \({\text{Cd}}{{{\text{S}}}_{{{\text{1--}}x}}}{\text{S}}{{{\text{e}}}_{x}}\) granular films. It has been shown that the current of charge carriers in surface states flowing through the gaps between the granules at a certain film topology can exceed by many orders of magnitude the current associated with tunneling of charge carriers between the granules.

About the authors

N. E. Nefedkin

Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics

Email: andrianov.es@mipt.ru
Russian Federation, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055

E. S. Andrianov

Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics

Author for correspondence.
Email: andrianov.es@mipt.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055

A. A. Pukhov

Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics

Email: andrianov.es@mipt.ru
Russian Federation, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055

A. P. Vinogradov

Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University); Dukhov All-Russia Research Institute of Automatics

Email: andrianov.es@mipt.ru
Russian Federation, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701; Moscow, 127055

S. V. Gurov

Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences; Moscow Institute of Physics and Technology (State University)

Email: andrianov.es@mipt.ru
Russian Federation, Moscow, 125412; Dolgoprudnyi, Moscow oblast, 141701

I. A. Boginskaya

Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences

Email: andrianov.es@mipt.ru
Russian Federation, Moscow, 125412

M. V. Sedova

Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences

Email: andrianov.es@mipt.ru
Russian Federation, Moscow, 125412

I. V. Bykov

Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences

Email: andrianov.es@mipt.ru
Russian Federation, Moscow, 125412

I. A. Ryzhikov

Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences

Email: andrianov.es@mipt.ru
Russian Federation, Moscow, 125412


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