Focal plane arrays mesastructures formation by ion-beam etching
- 作者: Sednev M.1, Boltar K.1,2, Sharonov Y.1, Lopukhin A.1
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隶属关系:
- OAO NPO Orion
- Moscow Institute of Physics and Technology (State University)
- 期: 卷 61, 编号 3 (2016)
- 页面: 324-327
- 栏目: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196838
- DOI: https://doi.org/10.1134/S1064226916030153
- ID: 196838
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详细
The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions.
作者简介
M. Sednev
OAO NPO Orion
编辑信件的主要联系方式.
Email: orion@orion-ir.ru
俄罗斯联邦, ul. Kosinskaya 9, Moscow, 111538
K. Boltar
OAO NPO Orion; Moscow Institute of Physics and Technology (State University)
Email: orion@orion-ir.ru
俄罗斯联邦, ul. Kosinskaya 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700
Yu. Sharonov
OAO NPO Orion
Email: orion@orion-ir.ru
俄罗斯联邦, ul. Kosinskaya 9, Moscow, 111538
A. Lopukhin
OAO NPO Orion
Email: orion@orion-ir.ru
俄罗斯联邦, ul. Kosinskaya 9, Moscow, 111538