Focal plane arrays mesastructures formation by ion-beam etching
- Autores: Sednev M.1, Boltar K.1,2, Sharonov Y.1, Lopukhin A.1
-
Afiliações:
- OAO NPO Orion
- Moscow Institute of Physics and Technology (State University)
- Edição: Volume 61, Nº 3 (2016)
- Páginas: 324-327
- Seção: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196838
- DOI: https://doi.org/10.1134/S1064226916030153
- ID: 196838
Citar
Resumo
The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions.
Palavras-chave
Sobre autores
M. Sednev
OAO NPO Orion
Autor responsável pela correspondência
Email: orion@orion-ir.ru
Rússia, ul. Kosinskaya 9, Moscow, 111538
K. Boltar
OAO NPO Orion; Moscow Institute of Physics and Technology (State University)
Email: orion@orion-ir.ru
Rússia, ul. Kosinskaya 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700
Yu. Sharonov
OAO NPO Orion
Email: orion@orion-ir.ru
Rússia, ul. Kosinskaya 9, Moscow, 111538
A. Lopukhin
OAO NPO Orion
Email: orion@orion-ir.ru
Rússia, ul. Kosinskaya 9, Moscow, 111538