Scanning Thermal Imaging Device Based on a Domestic Photodetector Device


Цитировать

Полный текст

Открытый доступ Открытый доступ
Доступ закрыт Доступ предоставлен
Доступ закрыт Только для подписчиков

Аннотация

The results of the development of a thermal imaging device based on the FEM10M photodetector produced by the Orion Research and Production Association are presented. As a result of the implementation of measures for improvement of the TPK-Z thermal imaging camera so as to comply with a domestic photodetector, the TPK-ZR thermal imaging device based on a domestic multirow array was developed, tuned, and tested. The minimum allowed temperature difference (MATD) and noise equivalent temperature difference (NETD) characteristics of the device are at least as good as the corresponding characteristics of a thermal imager using a foreign photodetector. The complex of image processing algorithms used in the TPK-ZR device makes it possible to obtain thermal images whose quality is not worse then the quality of the images obtained with the TPK-Z device. Further development of the obtained result can be implementation of a series of measures aimed at achieving full automation of calibration processes in the thermal imager.

Ключевые слова

Об авторах

I. Kremis

Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch

Автор, ответственный за переписку.
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090

V. Kalinin

Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch

Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090

V. Fedorinin

Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch

Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090

Yu. Korsakov

Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch

Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090

K. Shatunov

Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch

Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090


© Pleiades Publishing, Inc., 2018

Данный сайт использует cookie-файлы

Продолжая использовать наш сайт, вы даете согласие на обработку файлов cookie, которые обеспечивают правильную работу сайта.

О куки-файлах