Scanning Thermal Imaging Device Based on a Domestic Photodetector Device


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Resumo

The results of the development of a thermal imaging device based on the FEM10M photodetector produced by the Orion Research and Production Association are presented. As a result of the implementation of measures for improvement of the TPK-Z thermal imaging camera so as to comply with a domestic photodetector, the TPK-ZR thermal imaging device based on a domestic multirow array was developed, tuned, and tested. The minimum allowed temperature difference (MATD) and noise equivalent temperature difference (NETD) characteristics of the device are at least as good as the corresponding characteristics of a thermal imager using a foreign photodetector. The complex of image processing algorithms used in the TPK-ZR device makes it possible to obtain thermal images whose quality is not worse then the quality of the images obtained with the TPK-Z device. Further development of the obtained result can be implementation of a series of measures aimed at achieving full automation of calibration processes in the thermal imager.

Sobre autores

I. Kremis

Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch

Autor responsável pela correspondência
Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

V. Kalinin

Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

V. Fedorinin

Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

Yu. Korsakov

Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

K. Shatunov

Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090


Declaração de direitos autorais © Pleiades Publishing, Inc., 2018

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