Scanning Thermal Imaging Device Based on a Domestic Photodetector Device
- Authors: Kremis I.I.1, Kalinin V.S.1, Fedorinin V.N.1, Korsakov Y.M.1, Shatunov K.P.1
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Affiliations:
- Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch
- Issue: Vol 63, No 3 (2018)
- Pages: 292-295
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/199599
- DOI: https://doi.org/10.1134/S1064226918030117
- ID: 199599
Cite item
Abstract
The results of the development of a thermal imaging device based on the FEM10M photodetector produced by the Orion Research and Production Association are presented. As a result of the implementation of measures for improvement of the TPK-Z thermal imaging camera so as to comply with a domestic photodetector, the TPK-ZR thermal imaging device based on a domestic multirow array was developed, tuned, and tested. The minimum allowed temperature difference (MATD) and noise equivalent temperature difference (NETD) characteristics of the device are at least as good as the corresponding characteristics of a thermal imager using a foreign photodetector. The complex of image processing algorithms used in the TPK-ZR device makes it possible to obtain thermal images whose quality is not worse then the quality of the images obtained with the TPK-Z device. Further development of the obtained result can be implementation of a series of measures aimed at achieving full automation of calibration processes in the thermal imager.
Keywords
About the authors
I. I. Kremis
Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch
Author for correspondence.
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
V. S. Kalinin
Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
V. N. Fedorinin
Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
Yu. M. Korsakov
Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090
K. P. Shatunov
Technological and Design Institute of Applied Microelectronics (Branch of Rzhanov Institute of Semiconductor Physics), Siberian Branch
Email: igor21738@ngs.ru
Russian Federation, Novosibirsk, 630090