Informaçao sobre o Autor
Budtolaev, A. K.
Edição | Seção | Título | Arquivo |
Volume 62, Nº 3 (2017) | Articles from the Russian Journal Prikladnaya Fizika | Epitaxial structures for InGaAs/InP avalanche photodiodes | |
Volume 62, Nº 9 (2017) | Articles from the Russian Journal Uspekhi Prikladnoi Fiziki | Formation of guard ring of avalanche photodiode based on the InGaAs/InP heterostructure | |
Volume 63, Nº 3 (2018) | Articles from the Russian Journal Prikladnaya Fizika | Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures | |
Volume 64, Nº 3 (2019) | Article | Effect of the Spread of the Depths of p–n Junction on the Parameters of InGaAs/InP Avalanche Photodiodes |