Author Details
Budtolaev, A. K.
Issue | Section | Title | File |
Vol 62, No 3 (2017) | Articles from the Russian Journal Prikladnaya Fizika | Epitaxial structures for InGaAs/InP avalanche photodiodes | |
Vol 62, No 9 (2017) | Articles from the Russian Journal Uspekhi Prikladnoi Fiziki | Formation of guard ring of avalanche photodiode based on the InGaAs/InP heterostructure | |
Vol 63, No 3 (2018) | Articles from the Russian Journal Prikladnaya Fizika | Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures | |
Vol 64, No 3 (2019) | Article | Effect of the Spread of the Depths of p–n Junction on the Parameters of InGaAs/InP Avalanche Photodiodes |