Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns


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Abstract—Design and fabrication of photosensitive array elements in the 384 × 288 element format with a step of 25 μm with a long wavelength limit of sensitivity at 0.5 to approximately 9.5 μm were performed. The circuit and topology were developed, according to which matrix high-speed multiplexers are manufactured in the form of 384 × 288 elements with a step of 25 microns, which provide operating modes at a clock frequency of up to 20 MHz. The 384 × 288 element hybrid photodetector (PD) format in 25 μm increments has an average Noise Equivalent Temperature Difference (NETD) of less than 30 mK, while the number of working elements was more than 97%. Examples are given of using the microscanning system to reduce defective pixels in an image frame and/or increase the frame format to 768 × 576. It is shown that as a result of the use of microscans in a thermal imaging channel based on the developed PD during the transition to the 768 × 576 format, an improvement in spatial resolution of 1.4 times was obtained for the same minimum resolved temperature difference (MRTD), while the MRTD at a frequency of 0.44 mrad-1 decreased from 1.6 to 0.9 K compared to the original 384 × 288 format.

Sobre autores

A. Zverev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

A. Suslyakov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

I. Sabinina

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

G. Sidorov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

M. Yakushev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

V. Kuzmin

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

V. Varavin

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

V. Remesnik

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

Yu. Makarov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

A. Predein

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

D. Gorshkov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

S. Dvoretsky

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

V. Vasil’ev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Autor responsável pela correspondência
Email: vas@isp.nsc.ru
Rússia, Novosibirsk, 630090

Yu. Sidorov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

A. Latyshev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

I. Kremis

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences,
Design and Technology Institute of Applied Microelectronics

Autor responsável pela correspondência
Email: igor21738@ngs.ru
Rússia, Novosibirsk, 630090

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