Отправить статью по E-mail Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns
- Авторы: Zverev A.V.1, Suslyakov A.O.1, Sabinina I.V.1, Sidorov G.Y.1, Yakushev M.V.1, Kuzmin V.D.1, Varavin V.S.1, Remesnik V.G.1, Makarov Y.S.1, Predein A.V.1, Gorshkov D.V.1, Dvoretsky S.A.1, Vasil’ev V.V.1, Sidorov Y.G.1, Latyshev A.V.1, Kremis I.I.2
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Design and Technology Institute of Applied Microelectronics
- Выпуск: Том 64, № 9 (2019)
- Страницы: 1024-1029
- Раздел: Article
- URL: https://journals.rcsi.science/1064-2269/article/view/201239
- DOI: https://doi.org/10.1134/S1064226919090171
- ID: 201239
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Аннотация
Abstract—Design and fabrication of photosensitive array elements in the 384 × 288 element format with a step of 25 μm with a long wavelength limit of sensitivity at 0.5 to approximately 9.5 μm were performed. The circuit and topology were developed, according to which matrix high-speed multiplexers are manufactured in the form of 384 × 288 elements with a step of 25 microns, which provide operating modes at a clock frequency of up to 20 MHz. The 384 × 288 element hybrid photodetector (PD) format in 25 μm increments has an average Noise Equivalent Temperature Difference (NETD) of less than 30 mK, while the number of working elements was more than 97%. Examples are given of using the microscanning system to reduce defective pixels in an image frame and/or increase the frame format to 768 × 576. It is shown that as a result of the use of microscans in a thermal imaging channel based on the developed PD during the transition to the 768 × 576 format, an improvement in spatial resolution of 1.4 times was obtained for the same minimum resolved temperature difference (MRTD), while the MRTD at a frequency of 0.44 mrad-1 decreased from 1.6 to 0.9 K compared to the original 384 × 288 format.
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Об авторах
A. Zverev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
A. Suslyakov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
I. Sabinina
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
G. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
M. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
V. Kuzmin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
V. Remesnik
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
Yu. Makarov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
A. Predein
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
D. Gorshkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
S. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
V. Vasil’ev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: vas@isp.nsc.ru
Россия, Novosibirsk, 630090
Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
I. Kremis
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences,Design and Technology Institute of Applied Microelectronics
Автор, ответственный за переписку.
Email: igor21738@ngs.ru
Россия, Novosibirsk, 630090
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