Мақаланы E-mail арқылы жіберу Analytical description of avalanche photodiode characteristics. An overview: Part I
- Авторлар: Burlakov I.1,2, Filachev A.1,2, Kholodnov V.1,3,4,2
-
Мекемелер:
- Orion Research and Production Association
- Moscow State Technical University of Radio Engineering
- Kotel’nikov Institute of Radio Engineering and Electronics
- Moscow Institute of Physics and Technology
- Шығарылым: Том 62, № 9 (2017)
- Беттер: 1027-1047
- Бөлім: Articles from the Russian Journal Uspekhi Prikladnoi Fiziki
- URL: https://journals.rcsi.science/1064-2269/article/view/198763
- DOI: https://doi.org/10.1134/S1064226917090054
- ID: 198763
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The analytical model of avalanche photodiodes based on the different types of p–n structures is discussed. Formulas for avalanche breakdown voltage VBD and the exponent in Miller’s relation for dependence between the carrier multiplication coefficient M and the applied voltage V are derived. The obtained results enable us to avoid time-consuming numerical calculations and develop an analytical method for optimizing the structural parameters of avalanche heterophotodiodes (its principles will be reported in Part II).
Негізгі сөздер
Авторлар туралы
I. Burlakov
Orion Research and Production Association; Moscow State Technical University of Radio Engineering
Email: vkholodnov@mail.ru
Ресей, Moscow, 111538; Moscow, 119454
A. Filachev
Orion Research and Production Association; Moscow State Technical University of Radio Engineering
Email: vkholodnov@mail.ru
Ресей, Moscow, 111538; Moscow, 119454
V. Kholodnov
Orion Research and Production Association; Kotel’nikov Institute of Radio Engineering and Electronics; Moscow Institute of Physics and Technology; Moscow State Technical University of Radio Engineering
Хат алмасуға жауапты Автор.
Email: vkholodnov@mail.ru
Ресей, Moscow, 111538; Moscow, 125009; Dolgoprudnyi, Moscow oblast, 141700; Moscow, 119454
