Email this article Analytical description of avalanche photodiode characteristics. An overview: Part I
- Authors: Burlakov I.D.1,2, Filachev A.M.1,2, Kholodnov V.A.1,3,4,2
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Affiliations:
- Orion Research and Production Association
- Moscow State Technical University of Radio Engineering
- Kotel’nikov Institute of Radio Engineering and Electronics
- Moscow Institute of Physics and Technology
- Issue: Vol 62, No 9 (2017)
- Pages: 1027-1047
- Section: Articles from the Russian Journal Uspekhi Prikladnoi Fiziki
- URL: https://journals.rcsi.science/1064-2269/article/view/198763
- DOI: https://doi.org/10.1134/S1064226917090054
- ID: 198763
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Abstract
The analytical model of avalanche photodiodes based on the different types of p–n structures is discussed. Formulas for avalanche breakdown voltage VBD and the exponent in Miller’s relation for dependence between the carrier multiplication coefficient M and the applied voltage V are derived. The obtained results enable us to avoid time-consuming numerical calculations and develop an analytical method for optimizing the structural parameters of avalanche heterophotodiodes (its principles will be reported in Part II).
Keywords
About the authors
I. D. Burlakov
Orion Research and Production Association; Moscow State Technical University of Radio Engineering
Email: vkholodnov@mail.ru
Russian Federation, Moscow, 111538; Moscow, 119454
A. M. Filachev
Orion Research and Production Association; Moscow State Technical University of Radio Engineering
Email: vkholodnov@mail.ru
Russian Federation, Moscow, 111538; Moscow, 119454
V. A. Kholodnov
Orion Research and Production Association; Kotel’nikov Institute of Radio Engineering and Electronics; Moscow Institute of Physics and Technology; Moscow State Technical University of Radio Engineering
Author for correspondence.
Email: vkholodnov@mail.ru
Russian Federation, Moscow, 111538; Moscow, 125009; Dolgoprudnyi, Moscow oblast, 141700; Moscow, 119454
