电邮这篇文章 Analytical description of avalanche photodiode characteristics. An overview: Part I
- 作者: Burlakov I.1,2, Filachev A.1,2, Kholodnov V.1,3,4,2
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隶属关系:
- Orion Research and Production Association
- Moscow State Technical University of Radio Engineering
- Kotel’nikov Institute of Radio Engineering and Electronics
- Moscow Institute of Physics and Technology
- 期: 卷 62, 编号 9 (2017)
- 页面: 1027-1047
- 栏目: Articles from the Russian Journal Uspekhi Prikladnoi Fiziki
- URL: https://journals.rcsi.science/1064-2269/article/view/198763
- DOI: https://doi.org/10.1134/S1064226917090054
- ID: 198763
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详细
The analytical model of avalanche photodiodes based on the different types of p–n structures is discussed. Formulas for avalanche breakdown voltage VBD and the exponent in Miller’s relation for dependence between the carrier multiplication coefficient M and the applied voltage V are derived. The obtained results enable us to avoid time-consuming numerical calculations and develop an analytical method for optimizing the structural parameters of avalanche heterophotodiodes (its principles will be reported in Part II).
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作者简介
I. Burlakov
Orion Research and Production Association; Moscow State Technical University of Radio Engineering
Email: vkholodnov@mail.ru
俄罗斯联邦, Moscow, 111538; Moscow, 119454
A. Filachev
Orion Research and Production Association; Moscow State Technical University of Radio Engineering
Email: vkholodnov@mail.ru
俄罗斯联邦, Moscow, 111538; Moscow, 119454
V. Kholodnov
Orion Research and Production Association; Kotel’nikov Institute of Radio Engineering and Electronics; Moscow Institute of Physics and Technology; Moscow State Technical University of Radio Engineering
编辑信件的主要联系方式.
Email: vkholodnov@mail.ru
俄罗斯联邦, Moscow, 111538; Moscow, 125009; Dolgoprudnyi, Moscow oblast, 141700; Moscow, 119454
